George Haddad
George Haddad
Professor,univ.of Mich.
Verified email at umich.edu
Title
Cited by
Cited by
Year
Digital circuit applications of resonant tunneling devices
P Mazumder, S Kulkarni, M Bhattacharya, JP Sun, GI Haddad
Proceedings of the IEEE 86 (4), 664-686, 1998
6211998
Resonant tunneling diodes: Models and properties
JP Sun, GI Haddad, P Mazumder, JN Schulman
Proceedings of the IEEE 86 (4), 641-660, 1998
4701998
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
K Yang, JR East, GI Haddad
Solid-State Electronics 36 (3), 321-330, 1993
2411993
Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
H Eisele, A Rydberg, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 48 (4), 626-631, 2000
1542000
Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates
JJ Barnes, RJ Lomax, GI Haddad
IEEE transactions on electron devices 23 (9), 1042-1048, 1976
1361976
Two-terminal millimeter-wave sources
H Eisele, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 46 (6), 739-746, 1998
1351998
Compact multiple-valued multiplexers using negative differential resistance devices
HL Chan, S Mohan, P Mazumder, GI Haddad
IEEE Journal of Solid-State Circuits 31 (8), 1151-1156, 1996
1351996
Digital logic design using negative differential resistance diodes and field-effect transistors
S Kulkarni, P Mazumder, GI Haddad
US Patent 5,903,170, 1999
1331999
Characteristics of coupled microstrip transmission lines-I: Coupled-mode formulation of inhomogeneous lines
MK Krage, GI Haddad
IEEE Transactions on Microwave theory and techniques 18 (4), 217-222, 1970
1291970
Transceiver front-end architectures using vibrating micromechanical signal processors
CTC Nguyen
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems …, 2001
1222001
Power and stability limitations of resonant tunneling diodes
C Kidner, I Mehdi, JR East, GI Haddad
IEEE Transactions on microwave Theory and Techniques 38 (7), 864-872, 1990
1131990
Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems
SG Yu, KW Kim, MA Stroscio, GJ Iafrate, JP Sun, GI Haddad
Journal of applied physics 82 (7), 3363-3367, 1997
1051997
Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceivers
K Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P Bhattacharya
Journal of lightwave technology 14 (8), 1831-1839, 1996
1011996
Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation
RK Mains, GI Haddad
Journal of applied physics 64 (7), 3564-3569, 1988
981988
High-efficiency class-A power amplifiers with a dual-bias-control scheme
K Yang, GI Haddad, JR East
IEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999
961999
Simulation of GaAs IMPATT diodes including energy and velocity transport equations
RK Mains, GI Haddad, PA Blakey
IEEE transactions on electron devices 30 (10), 1327-1338, 1983
941983
Frequency-Dependent Characteristics of MicrostripTransmission Lines
MK Krage, GI Haddad
IEEE Transactions on Microwave Theory and Techniques 20 (10), 678-688, 1972
871972
Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios
RK Mains, GI Haddad
Journal of Applied Physics 64 (10), 5041-5044, 1988
861988
Tunneling devices and applications in high functionality/speed digital circuits
GI Haddad, P Mazumder
Solid-State Electronics 41 (10), 1515-1524, 1997
821997
Nonlinear properties of IMPATT devices
WE Schroeder, GI Haddad
Proceedings of the IEEE 61 (2), 153-182, 1973
821973
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