| FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ... 2008 Symposium on VLSI Technology, 12-13, 2008 | 123 | 2008 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 64 | 2017 |
| Study of the cross contamination effect on post CMP in situ cleaning process HJ Kim, G Bohra, H Yang, SG Ahn, L Qin, D Koli Microelectronic engineering 136, 36-41, 2015 | 52 | 2015 |
| Cobalt CMP development for 7nm logic device C Wu, JH Han, X Shi, DR Koli, D Penigalapati ECS Transactions 77 (5), 93, 2017 | 37 | 2017 |
| Formation of cobalt-BTA complexes and their removal from various surfaces relevant to cobalt interconnect applications J Seo, SH Vegi, CK Ranaweera, NK Baradanahalli, JH Han, D Koli, ... ECS Journal of Solid State Science and Technology 8 (5), P3009, 2018 | 36 | 2018 |
| High performance bulk planar 20nm CMOS technology for low power mobile applications H Shang, S Jain, E Josse, E Alptekin, MH Nam, SW Kim, KH Cho, I Kim, ... 2012 Symposium on VLSI Technology (VLSIT), 129-130, 2012 | 30 | 2012 |
| Implantless dopant segregation for silicide contacts C Cabral Jr, JM Cotte, DR Koli, LL Kosbar, M Krishnan, C Lavoie, ... US Patent 8,889,537, 2014 | 15 | 2014 |
| Effects of pad temperature on the chemical mechanical polishing of tungsten HJ Kim, SG Ahn, L Qin, D Koli, V Govindarajulu, Y Moon ECS Journal of Solid State Science and Technology 3 (10), P310, 2014 | 14 | 2014 |
| Chemical mechanical planarization processes for fabrication of FinFET devices JB Chang, L Charns, JE Cummings, MA Guillorn, LJ Hupka, DR Koli, ... US Patent 8,513,127, 2013 | 14 | 2013 |
| Advanced structure for self-aligned contact and method for producing the same H Huang, D Koli, Y Zhou, X Shi, CC Chang, TF Chao US Patent 10,211,103, 2019 | 10 | 2019 |
| 20nm CMP model calibration with optmized metrology data and CMP model applications U Katakamsetty, D Koli, C Hui, R Ghulghazaryan, B Aytuna, J Wilson SPIE Proceedings 9427, 2015 | 10 | 2015 |
| Common fill of gate and source and drain contacts D Konduparthi, D Koli US Patent 9,136,131, 2015 | 9 | 2015 |
| Planarization scheme for finfet gate height uniformity control S Muralidharan, Z Hu, Q Zhang, JH Han, D Koli, Z Chen US Patent App. 14/153,120, 2015 | 9 | 2015 |
| Chemical mechanical planarization with overburden mask L Charns, JM Cotte, JE Cummings, LJ Hupka, DR Koli, T Konno, ... US Patent 8,524,606, 2013 | 8 | 2013 |
| Challenges in chemical mechanical planarization defects of 7nm device and its improvement opportunities JC Yang, D Penigalapati, TF Chao, WY Lu, D Koli 2017 China Semiconductor Technology International Conference (CSTIC), 1-3, 2017 | 7 | 2017 |
| CMP challenges for advanced technology nodes JH Zhang, H Huang, AM Greene, R Xie, SC Seo, P Montanini, WT Tseng, ... MRS Advances 2 (44), 2361-2372, 2017 | 7 | 2017 |
| New CMP processes development and challenges for 7nm and beyond H Huang, D Koli, JH Zhang, S Tsai, T Chao, Y Lu, HJ Kim, Q Fang, W Lu 2018 China Semiconductor Technology International Conference (CSTIC), 1-5, 2018 | 6 | 2018 |
| Metal Flake Defect and Its Formation Mechanism during Replacement Metal Gate CMP Process DK Hong Jin Kim, Venugopal Govindarajulu, Girish Bohra, Huey-Ming Wang ECS J. Solid State Sci. Technol. 2016 volume 5, issue 10, P637-P640 5 (10 …, 2016 | 6* | 2016 |
| Effect of reactive ion etch on the polishing selectivity during silicon nitride chemical mechanical polishing for sub-10 nm logic device J Han, X Shi, C Wu, D Koli, HJ Kim ECS Journal of Solid State Science and Technology 6 (4), P101, 2017 | 5 | 2017 |
| A Study on Selectivity during SiN Chemical Mechanical Polishing for Sub-10nm Logic Device JH Han, X Shi, C Wu, D Koli International Conference on Planarization/CMP Technology (ICPT 2016), 17-19, 2016 | 5 | 2016 |
