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Simon Gautier
Simon Gautier
Institut Lafayette
Verified email at institutlafayette.eu
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Cited by
Year
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ...
Applied Physics Letters 91 (7), 2007
1212007
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ...
Applied Physics Letters 91 (7), 2007
1212007
Bandgap bowing in BGaN thin films
A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ...
Applied Physics Letters 93 (8), 2008
702008
Bandgap bowing in BGaN thin films
A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ...
Applied Physics Letters 93 (8), 2008
702008
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ...
Journal of crystal growth 370, 57-62, 2013
672013
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111)
Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ...
Applied Physics Letters 102 (1), 2013
672013
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ...
Applied Physics Letters 100 (5), 2012
662012
GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
S Gautier, C Sartel, S Ould-Saad, J Martin, A Sirenko, A Ougazzaden
Journal of Crystal Growth 298, 428-432, 2007
572007
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices
H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ...
Applied Physics Letters 99 (22), 2011
472011
Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy
E Cicek, R McClintock, Z Vashaei, Y Zhang, S Gautier, CY Cho, ...
Applied Physics Letters 102 (5), 2013
452013
BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
A Ougazzaden, S Gautier, C Sartel, N Maloufi, J Martin, F Jomard
Journal of crystal growth 298, 316-319, 2007
452007
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ...
Journal of Crystal Growth 315 (1), 160-163, 2011
432011
Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ...
Journal of Crystal Growth 310 (5), 944-947, 2008
402008
Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ...
Journal of Crystal Growth 310 (5), 944-947, 2008
402008
Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
V Ravindran, M Boucherit, A Soltani, S Gautier, T Moudakir, J Dickerson, ...
Applied Physics Letters 100 (24), 2012
352012
Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE
G Orsal, N Maloufi, S Gautier, M Alnot, AA Sirenko, M Bouchaour, ...
Journal of Crystal Growth 310 (23), 5058-5062, 2008
342008
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ...
Nanotechnology 23 (45), 455707, 2012
332012
Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials
K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ...
physica status solidi (a) 209 (1), 25-28, 2012
322012
V2O5 gas sensors: A review
R Alrammouz, M Lazerges, J Pironon, IB Taher, A Randi, Y Halfaya, ...
Sensors and Actuators A: Physical 332, 113179, 2021
292021
Characteristics of the surface microstructures in thick InGaN layers on GaN
Y El Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ...
Optical Materials Express 3 (8), 1111-1118, 2013
292013
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