| Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ... Physical review B 71 (20), 205325, 2005 | 372 | 2005 |
| Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy GE Cirlin, VG Dubrovskii, YB Samsonenko, AD Bouravleuv, K Durose, ... Physical Review B 82 (3), 035302, 2010 | 259 | 2010 |
| Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov Physical Review E 73 (2), 021603, 2006 | 251 | 2006 |
| Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ... Physical Review B 79 (20), 205316, 2009 | 246 | 2009 |
| Semiconductor nanowhiskers: synthesis, properties, and applications VG Dubrovskii, GE Cirlin, VM Ustinov Semiconductors 43, 1539-1584, 2009 | 213 | 2009 |
| Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ... Journal of Applied Physics 102 (9), 2007 | 192 | 2007 |
| New mode of vapor− liquid− solid nanowire growth VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner Nano letters 11 (3), 1247-1253, 2011 | 178 | 2011 |
| Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ... physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009 | 175 | 2009 |
| Kinetics of the initial stage of coherent island formation in heteroepitaxial systems VG Dubrovskii, GE Cirlin, VM Ustinov Physical Review B 68 (7), 075409, 2003 | 175 | 2003 |
| Growth and characterization of InP nanowires with InAsP insertions M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ... Nano letters 7 (6), 1500-1504, 2007 | 169 | 2007 |
| Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007 | 166 | 2007 |
| Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin Nanotechnology 17 (16), 4025, 2006 | 150 | 2006 |
| Role of nonlinear effects in nanowire growth and crystal phase VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ... Physical Review B 80 (20), 205305, 2009 | 125 | 2009 |
| Anapoles in free-standing III–V nanodisks enhancing second-harmonic generation M Timofeeva, L Lang, F Timpu, C Renaut, A Bouravleuv, I Shtrom, G Cirlin, ... Nano letters 18 (6), 3695-3702, 2018 | 123 | 2018 |
| Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface GE Cirlin, GM Guryanov, AO Golubok, SY Tipissev, NN Ledentsov, ... Applied physics letters 67 (1), 97-99, 1995 | 119 | 1995 |
| Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111) L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand Nanotechnology 19 (15), 155704, 2008 | 111 | 2008 |
| GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature JC Harmand, M Tchernycheva, G Patriarche, L Travers, F Glas, G Cirlin Journal of Crystal Growth 301, 853-856, 2007 | 106 | 2007 |
| Shape modification of III-V nanowires: The role of nucleation on sidewalls VG Dubrovskii, NV Sibirev, GE Cirlin, M Tchernycheva, JC Harmand, ... Physical review E 77 (3), 031606, 2008 | 96 | 2008 |
| Growth of GaAs nanoscale whiskers by magnetron sputtering deposition VG Dubrovskii, IP Soshnikov, NV Sibirev, GE Cirlin, VM Ustinov Journal of crystal growth 289 (1), 31-36, 2006 | 91 | 2006 |
| Formation of InAs quantum dots on a silicon (100) surface GE Cirlin, VG Dubrovskii, VN Petrov, NK Polyakov, NP Korneeva, ... Semiconductor science and technology 13 (11), 1262, 1998 | 91 | 1998 |
