Matthew Goeckner
Title
Cited by
Cited by
Year
Model of energetic electron transport in magnetron discharges
TE Sheridan, MJ Goeckner, J Goree
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990
1741990
Electron beam exciter for use in chemical analysis in processing systems
JW Hosch, MJ Goeckner, M Whelan, AW Kueny, KC Harvey, ...
US Patent 9,997,325, 2018
1552018
Observation of two‐temperature electrons in a sputtering magnetron plasma
TE Sheridan, MJ Goeckner, J Goree
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991
1141991
Monte Carlo simulation of ions in a magnetron plasma
MJ Goeckner, JA Goree, TE Sheridan
IEEE transactions on plasma science 19 (2), 301-308, 1991
1061991
Dose monitor for plasma doping system
RB Liebert, BO Pedersen, M Goeckner
US Patent 6,020,592, 2000
1032000
Measurements of ion velocity and density in the plasma sheath
MJ Goeckner, J Goree, TE Sheridan
Physics of Fluids B: Plasma Physics 4 (6), 1663-1670, 1992
821992
Hollow cathode for plasma doping system
MJ Goeckner, Z Fang
US Patent 6,182,604, 2001
792001
Laser‐induced fluorescence measurement of plasma ion temperatures: Corrections for power saturation
MJ Goeckner, J Goree
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
651989
Laser‐induced fluorescence characterization of a multidipole filament plasma
MJ Goeckner, J Goree, TE Sheridan
Physics of Fluids B: Plasma Physics 3 (10), 2913-2921, 1991
641991
Electron velocity distribution functions in a sputtering magnetron discharge for the direction
TE Sheridan, MJ Goeckner, J Goree
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998
591998
Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
MJ Goeckner, CE Van Wagoner
US Patent 6,433,553, 2002
582002
Method and apparatus for low voltage plasma doping using dual pulses
MJ Goeckner, Z Fang
US Patent 6,335,536, 2002
572002
Dose monitor for plasma doping system
Z Fang, M Goeckner
US Patent 6,528,805, 2003
562003
Measurements of the presheath in an electron cyclotron resonance etching device
JA Meyer, GH Kim, MJ Goeckner, N Hershkowitz
Plasma Sources Science and Technology 1 (3), 147, 1992
531992
A source of hyperthermal neutrals for materials processing
MJ Goeckner, TK Bennett, SA Cohen
Applied physics letters 71 (7), 980-982, 1997
491997
Collisional sheath dynamics
TE Sheridan, MJ Goeckner
Journal of applied physics 77 (10), 4967-4972, 1995
481995
Dose monitor for plasma doping system
Z Fang, M Goeckner
US Patent 6,300,643, 2001
472001
Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates
S Ramachandran, L Tao, TH Lee, S Sant, LJ Overzet, MJ Goeckner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
452006
Plasma doping for shallow junctions
MJ Goeckner, SB Felch, Z Fang, D Lenoble, J Galvier, A Grouillet, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
431999
Laser‐induced fluorescence characterization of ions in a magnetron plasma
MJ Goeckner, J Goree, TE Sheridan
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (6 …, 1990
431990
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Articles 1–20