Methods for selective deposition of doped semiconductor material LPB Lima, R Khazaka, Q Xie US Patent 11,637,014, 2023 | 205 | 2023 |
Methods for selective deposition using a sacrificial capping layer LPB Lima, R Khazaka, Q Xie US Patent 11,495,459, 2022 | 205 | 2022 |
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ... Acs Photonics 6 (10), 2462-2469, 2019 | 139 | 2019 |
Characterization of nanosilver dry films for high-temperature applications R Khazaka, B Thollin, L Mendizabal, D Henry, R Hanna IEEE Transactions on Device and Materials Reliability 15 (2), 149-155, 2015 | 26 | 2015 |
Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates R Khazaka, E Nolot, J Aubin, JM Hartmann Semiconductor Science and Technology 33 (12), 124011, 2018 | 21 | 2018 |
Silver versus white sheet as a back reflector for microcrystalline silicon solar cells deposited on LPCVD‐ZnO electrodes of various textures R Khazaka, E Moulin, M Boccard, L Garcia, S Hänni, FJ Haug, F Meillaud, ... Progress in Photovoltaics: Research and Applications 23 (9), 1182-1189, 2015 | 21 | 2015 |
Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R Khazaka, M Portail, P Vennéguès, D Alquier, JF Michaud Acta Materialia 98, 336-342, 2015 | 15 | 2015 |
Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ... ECS Transactions 93 (1), 7, 2019 | 12 | 2019 |
Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate R Khazaka, E Bahette, M Portail, D Alquier, JF Michaud Materials Letters 160, 28-30, 2015 | 12 | 2015 |
Contact resistivity of highly doped Si: P, Si: As, and Si: P: As Epi layers for source/drain epitaxy E Rosseel, C Porret, AY Hikavyy, R Loo, M Tirrito, B Douhard, O Richard, ... ECS Transactions 98 (5), 37, 2020 | 11 | 2020 |
Mid-infrared GeSn-based LEDs with Sn content up to 16% M Bertrand, N Pauc, QM Thai, J Chrétien, L Casiez, A Quintero, ... 2019 IEEE 16th International Conference on Group IV Photonics (GFP), 1-2, 2019 | 10 | 2019 |
Investigation of the growth of Si-Ge-Sn pseudomorphic layers on 200 mm Ge virtual substrates: impact of growth pressure, HCl and Si2H6 flows R Khazaka, J Aubin, E Nolot, JM Hartmann ECS Transactions 86 (7), 207, 2018 | 9 | 2018 |
Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared M Bertrand, L Casiez, A Quintero, J Chrétien, N Pauc, QM Thai, ... 2020 IEEE Photonics Conference (IPC), 1-2, 2020 | 8 | 2020 |
Silicon Growth on 3C-SiC (001)/Si (001): Pressure Influence and Thermal Effect R Khazaka, M Portail, P Vennéguès, M Zielinski, T Chassagne, D Alquier, ... Materials Science Forum 821, 978-981, 2015 | 7 | 2015 |
ACS Photonics 6, 2462 (2019) J Chrétien, N Pauc, FA Pilon, M Bertrand, QM Thai, L Casiez, N Bernier, ... | 7 | |
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R Khazaka, M Grundmann, M Portail, P Vennéguès, M Zielinski, ... Applied Physics Letters 108 (1), 011608, 2016 | 6 | 2016 |
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes R Khazaka, JF Michaud, P Vennéguès, D Alquier, M Portail Applied Physics Letters 110 (8), 2017 | 5 | 2017 |
300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on … H Xu, R Khazaka, J Zhang, Z Zheng, Y Chen, X Gong 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 3 | 2022 |
On the interplay between Si (110) epilayer atomic roughness and subsequent 3C-SiC growth direction R Khazaka, JF Michaud, P Vennéguès, L Nguyen, D Alquier, M Portail Journal of Applied Physics 120 (18), 2016 | 3 | 2016 |
From atomic level investigations to membrane architecture : an in-depth study of the innovative 3C-SiC/Si/3C-SiC/Si heterostructure R Khazaka Francois Rabelais University, 2016 | 3 | 2016 |