Martin Stutzmann

Cited by

	All	Since 2018
Citations	43748	9574
h-index	96	41
i10-index	503	203

2300

1150

575

1725

198519861987198819891990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023126 131 278 212 280 205 438 356 598 509 518 483 507 592 597 813 871 889 1184 1182 1286 1368 1363 1625 1543 1666 1879 2059 2206 2018 2040 2101 2018 1948 1786 1725 1601 1385 1127

Public access

View all

91 articles

80 articles

available

not available

Based on funding mandates

Co-authors

Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenVerified email at wsi.tum.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREAVerified email at icn2.cat
Martin EickhoffInstitut für Festkörperphysik, Universität BremenVerified email at ifp.uni-bremen.de
Roman DimitrovFinisarVerified email at finisar.com
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität MünchenVerified email at wsi.tum.de
Hartmut WiggersUniversity of Duisburg-EssenVerified email at uni-due.de
James R. ShealyCornell UniversityVerified email at ece.cornell.edu
Josef Gerhard MüllerMunich University of Applied SciencesVerified email at hm.edu
WARREN B JACKSONPrincipal ScientistVerified email at parc.com
Carlos F. O. Graeff (ORCID:0000-0003...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESPVerified email at unesp.br
Nils WeimannUniversity of Duisburg-EssenVerified email at uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenVerified email at wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterVerified email at parc.com
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityVerified email at cardiff.ac.uk
Martin AlbrechtLeibniz-Institut für KristallzüchtungVerified email at ikz-berlin.de
Sebastian GoennenweinProfessor for Solid State Physics, Technische Universität DresdenVerified email at tu-dresden.de
Manuel CardonaMax Planck InstitutVerified email at fkf.mpg.de
Felix HoehneWalter-Schottky Institut, TU MünchenVerified email at wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameVerified email at itk.ppke.hu

Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

Verified email at wsi.tum.de - Homepage

Semiconductor Physics


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3548	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2034	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1506	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1375	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1032	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	779	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	646	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	621	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	575	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	431	1989
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	414	1999
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	414	1997
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	399	1996
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B 83 (8), 081304, 2011	393	2011
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	366	1998
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	354	2003
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	349	1987
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	300	1990
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	285	1997
Charge state manipulation of qubits in diamond B Grotz, MV Hauf, M Dankerl, B Naydenov, S Pezzagna, J Meijer, ... Nature communications 3 (1), 729, 2012	283	2012

The system can't perform the operation now. Try again later.

Articles 1–20

Citations per year

Duplicate citations

Merged citations

Add co-authorsCo-authors

Follow

Cited by

Co-authors