| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 116 | 2018 |
| Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior SA Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 63 (2), 565-572, 2015 | 93 | 2015 |
| Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Journal of the Electron Devices Society 5 (5), 310-319, 2017 | 70 | 2017 |
| Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs S Ghosh, SA Ahsan, YS Chauhan, S Khandelwal 2016 IEEE International Conference on Electron Devices and Solid-State …, 2016 | 47 | 2016 |
| Analysis and modeling of cross-coupling and substrate capacitances in GaN HEMTs for power-electronic applications SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 64 (3), 816-823, 2017 | 41 | 2017 |
| GaN HEMT modeling for power and RF applications using ASM-HEMT S Ghosh, SA Ahsan, A Dasgupta, S Khandelwal, YS Chauhan 2016 3rd International Conference on Emerging Electronics (ICEE), 1-4, 2016 | 32 | 2016 |
| Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan 2016 IEEE International Conference on Electron Devices and Solid-State …, 2016 | 30 | 2016 |
| A new small-signal parameter extraction technique for large gate-periphery GaN HEMTs SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Microwave and Wireless Components Letters 27 (10), 918-920, 2017 | 24 | 2017 |
| Effect of access region and field plate on capacitance behavior of GaN HEMT K Sharma, A Dasgupta, S Ghosh, SA Ahsan, S Khandelwal, YS Chauhan 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 19 | 2015 |
| Pole-zero approach to analyze and model the kink in gain-frequency plot of GaN HEMTs SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Microwave and Wireless Components Letters 27 (3), 266-268, 2017 | 18 | 2017 |
| Modeling and analysis of GaN HEMTs for power-electronics and RF applications SA Ahsan Ph. D. dissertation, Ph. D. dissertation, 2017 | 14 | 2017 |
| A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ... IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021 | 12 | 2021 |
| A comprehensive physics-based current–voltage SPICE compact model for 2-D-material-based top-contact bottom-gated Schottky-barrier FETs SA Ahsan, SK Singh, C Yadav, EG Marin, A Kloes, M Schwarz IEEE Transactions on Electron Devices 67 (11), 5188-5195, 2020 | 11 | 2020 |
| Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures MS Nazir, P Kushwaha, A Pampori, SA Ahsan, YS Chauhan IEEE Transactions on Electron Devices 69 (11), 6016-6022, 2022 | 10 | 2022 |
| Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs AUH Pampori, SA Ahsan, YS Chauhan IEEE Transactions on Electron Devices 69 (5), 2275-2281, 2022 | 10 | 2022 |
| Modeling of bias-dependent effective velocity and its impact on saturation transconductance in AlGaN/GaN HEMTs AUH Pampori, SA Ahsan, R Dangi, U Goyal, SK Tomar, M Mishra, ... IEEE Transactions on Electron Devices 68 (7), 3302-3307, 2021 | 10 | 2021 |
| Modeling of trapping effects in GaN HEMTs S Agnihotri, S Ghosh, A Dasgupta, SA Ahsan, S Khandelwal, ... 2015 Annual IEEE India Conference (INDICON), 1-4, 2015 | 10 | 2015 |
| Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model A Dasgupta, S Ghosh, SA Ahsan, YS Chauhan, S Khandelwal, ... 2016 IEEE MTT-S International Microwave and RF Conference (IMaRC), 1-4, 2016 | 6 | 2016 |
| Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan IEEE Journal of the Electron Devices Society 9, 789-797, 2021 | 5 | 2021 |
| Capacitance modeling of a GaN HEMT with gate and source field plates SA Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, YS Chauhan IEEE international symposium on compound semiconductors (ISCS), Santa …, 2015 | 5 | 2015 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurVerified email at iitk.ac.in
