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Benjamin Olson
Benjamin Olson
Vixar Inc
Verified email at vixarinc.com
Title
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Cited by
Year
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ...
Applied Physics Letters 101 (9), 092109, 2012
2252012
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, ME Flatté, ...
Applied Physics Letters 103 (5), 052106, 2013
932013
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatté, ...
Applied Physics Letters 105 (2), 022107, 2014
822014
Intensity-and Temperature-Dependent Carrier Recombination in InAs/In As 1− x S b x Type-II Superlattices
BV Olson, EA Kadlec, JK Kim, JF Klem, SD Hawkins, EA Shaner, ...
Physical Review Applied 3 (4), 044010, 2015
672015
Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors
D Zuo, R Liu, D Wasserman, J Mabon, ZY He, S Liu, YH Zhang, ...
Applied Physics Letters 106 (7), 071107, 2015
492015
Cascaded superlattice InAs/GaSb light-emitting diodes for operation in the long-wave infrared
EJ Koerperick, DT Norton, JT Olesberg, BV Olson, JP Prineas, ...
IEEE Journal of Quantum Electronics 47 (1), 50-54, 2010
482010
Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers
MD Goldflam, EA Kadlec, BV Olson, JF Klem, SD Hawkins, ...
Applied Physics Letters 109 (25), 251103, 2016
442016
Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
BV Olson, CH Grein, JK Kim, EA Kadlec, JF Klem, SD Hawkins, ...
Applied Physics Letters 107 (26), 261104, 2015
412015
All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
BV Olson, LM Murray, JP Prineas, ME Flatté, JT Olesberg, TF Boggess
Applied Physics Letters 102 (20), 202101, 2013
382013
Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices
Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, J Olesberg, ...
Journal of Applied Physics 119 (21), 215705, 2016
272016
Vertical Hole Transport and Carrier Localization in Type-II Superlattice Heterojunction Bipolar Transistors
BV Olson, JF Klem, EA Kadlec, JK Kim, MD Goldflam, SD Hawkins, ...
Physical Review Applied 7 (2), 024016, 2017
252017
Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices
EA Kadlec, BV Olson, MD Goldflam, JK Kim, JF Klem, SD Hawkins, ...
Applied Physics Letters 109 (26), 261105, 2016
252016
Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices
Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatte, ...
Journal of Applied Physics 118 (12), 125701, 2015
252015
Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors
BV Olson
The University of Iowa, 2013
252013
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
HJ Haugan, GJ Brown, S Elhamri, S Pacley, BV Olson, TF Boggess
Journal of Applied Physics 111 (5), 053113, 2012
252012
Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices
LM Murray, KS Lokovic, BV Olson, A Yildirim, TF Boggess, JP Prineas
Journal of crystal growth 386, 194-198, 2014
232014
Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in Type-II Superlattices
Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatté, ...
Physical Review Applied 5 (5), 054016, 2016
212016
Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
BV Olson, JK Kim, EA Kadlec, JF Klem, SD Hawkins, D Leonhardt, ...
Applied Physics Letters 107 (18), 183504, 2015
212015
Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure
GC Dyer, X Shi, BV Olson, SD Hawkins, JF Klem, EA Shaner, W Pan
Applied Physics Letters 108 (1), 013106, 2016
142016
Nondegenerate two-photon absorption in GaSb
BV Olson, MP Gehlsen, TF Boggess
Optics Communications 304, 54-57, 2013
102013
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