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David R Hughart
David R Hughart
Verified email at sandia.gov
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Year
Resistive memory device requirements for a neural algorithm accelerator
S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
2016 International Joint Conference on Neural Networks (IJCNN), 929-938, 2016
1872016
Defect Interactions ofin: Implications for ELDRS and Latent Interface Trap Buildup
BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010
682010
Achieving ideal accuracies in analog neuromorphic computing using periodic carry
S Agarwal, RBJ Gedrim, AH Hsia, DR Hughart, EJ Fuller, AA Talin, ...
2017 Symposium on VLSI Technology, T174-T175, 2017
612017
A Comparison of the Radiation Response of and Memristors
DR Hughart, AJ Lohn, PR Mickel, SM Dalton, PE Dodd, MR Shaneyfelt, ...
IEEE Transactions on Nuclear Science 60 (6), 4512-4519, 2013
512013
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
492012
Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator
RB Jacobs-Gedrim, S Agarwal, KE Knisely, JE Stevens, ...
2017 IEEE International Conference on Rebooting Computing (ICRC), 1-10, 2017
292017
Mechanisms of interface trap buildup and annealing during elevated temperature irradiation
DR Hughart, RD Schrimpf, DM Fleetwood, BR Tuttle, ST Pantelides
IEEE Transactions on Nuclear Science 58 (6), 2930-2936, 2011
282011
A CMOS compatible, forming free TaOx ReRAM
AJ Lohn, JE Stevens, PR Mickel, DR Hughart, MJ Marinella
ECS Transactions 58 (5), 59, 2013
272013
Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling
IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008
252008
2016 Int. Joint Conf. on Neural Networks (IJCNN)
S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
IEEE, 2016
242016
Low dose rate test results of National Semiconductor's ELDRS-free bipolar amplifier LM124 and comparators LM139 and LM193
K Kruckmeyer, L McGee, B Brown, D Hughart
2008 IEEE Radiation Effects Data Workshop, 110-117, 2008
202008
Irradiation effects on perpendicular anisotropy spin–orbit torque magnetic tunnel junctions
M Alamdar, LJ Chang, K Jarvis, P Kotula, C Cui, R Gearba-Dolocan, Y Liu, ...
IEEE Transactions on Nuclear Science 68 (5), 665-670, 2021
192021
The Susceptibility of-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose
ML McLain, HP Hjalmarson, TJ Sheridan, PR Mickel, D Hanson, ...
IEEE Transactions on Nuclear Science 61 (6), 2997-3004, 2014
182014
Total ionizing dose and displacement damage effects on TaOx memristive memories
DR Hughart, SM Dalton, PR Mickel, PE Dodd, MR Shaneyfelt, E Bielejec, ...
2013 IEEE Aerospace Conference, 1-10, 2013
182013
ROSS SIM
S Agarwal, SJ Plimpton, RL Schiek, I Richter, AH Hsia, DR Hughart, ...
142017
Effects of ionizing radiation on TaOx-based memristive devices
M McLain, D Hughart, D Hanson, M Marinella
2014 IEEE Aerospace Conference, 1-9, 2014
142014
The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors
DR Hughart, RD Schrimpf, DM Fleetwood, XJ Chen, HJ Barnaby, ...
IEEE Transactions on Nuclear Science 56 (6), 3361-3366, 2009
142009
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance
FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan
IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022
132022
Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation
RB Jacobs-Gedrim, S Agarwal, RS Goeke, C Smith, PS Finnegan, ...
Journal of Applied Physics 124 (20), 2018
122018
Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy
TP Xiao, CH Bennett, FB Mancoff, JE Manuel, DR Hughart, ...
IEEE Transactions on Nuclear Science 68 (5), 581-587, 2021
112021
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Articles 1–20