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Yonghui Zheng
Yonghui Zheng
Verified email at phy.ecnu.edu.cn
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Year
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
F Rao, K Ding, Y Zhou, Y Zheng, M Xia, S Lv, Z Song, S Feng, ...
Science 358 (6369), 1423-1427, 2017
5442017
A highly CMOS compatible hafnia-based ferroelectric diode
Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ...
Nature communications 11 (1), 1391, 2020
1882020
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ...
Nature communications 13 (1), 645, 2022
1202022
Direct observation of metastable face-centered cubic Sb2Te3 crystal
Y Zheng, M Xia, Y Cheng, F Rao, K Ding, W Liu, Y Jia, Z Song, S Feng
Nano Research 9, 3453-3462, 2016
922016
Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory
Y Wang, Y Zheng, G Liu, T Li, T Guo, Y Cheng, S Lv, S Song, K Ren, ...
Applied Physics Letters 112 (13), 2018
722018
Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory
Q Wang, B Liu, Y Xia, Y Zheng, R Huo, Q Zhang, S Song, Y Cheng, ...
Applied Physics Letters 107 (22), 2015
652015
A candidate Zr-doped Sb2Te alloy for phase change memory application
Y Zheng, Y Cheng, M Zhu, X Ji, Q Wang, S Song, Z Song, W Liu, S Feng
Applied Physics Letters 108 (5), 2016
602016
Understanding the Effect of Al Doping on the Electrochemical Performance Improvement of the LiMn2O4 Cathode Material
W Xu, Y Zheng, Y Cheng, R Qi, H Peng, H Lin, R Huang
ACS Applied Materials & Interfaces 13 (38), 45446-45454, 2021
562021
Outstanding strengthening behavior and dynamic mechanical properties of in-situ Al–Al3Ni composites by Cu addition
JT Kim, V Soprunyuk, N Chawake, YH Zheng, F Spieckermann, SH Hong, ...
Composites Part B: Engineering 189, 107891, 2020
562020
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
Y Zheng, Y Wang, T Xin, Y Cheng, R Huang, P Liu, M Luo, Z Zhang, S Lv, ...
Communications Chemistry 2 (1), 13, 2019
472019
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film
Z Gao, Y Luo, S Lyu, Y Cheng, Y Zheng, Q Zhong, W Zhang, H Lyu
IEEE Electron Device Letters 42 (9), 1303-1306, 2021
382021
Phase change memory based on Ta–Sb–Te alloy–Towards a universal memory
Y Xue, Y Cheng, Y Zheng, S Yan, W Song, S Lv, S Song, Z Song
Materials Today Physics 15, 100266, 2020
382020
Atomic insights into surface orientations and oxygen vacancies in the LiMn2O4 cathode for lithium storage
W Xu, Y Zheng, L Lin, W Lei, Z Wang, H Song, Y Cheng, R Qi, H Peng, ...
Journal of Alloys and Compounds 870, 159387, 2021
332021
Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum
T Li, L Wu, X Ji, Y Zheng, G Liu, Z Song, J Shi, M Zhu, S Song, S Feng
AIP Advances 8 (2), 2018
332018
Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
Y Zheng, Y Cheng, R Huang, R Qi, F Rao, K Ding, W Yin, S Song, W Liu, ...
Scientific reports 7 (1), 5915, 2017
332017
Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory
Q Wang, B Liu, Y Xia, Y Zheng, R Huo, M Zhu, S Song, S Lv, Y Cheng, ...
physica status solidi (RRL)–Rapid Research Letters 9 (8), 470-474, 2015
322015
Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
X Chen, Y Zheng, M Zhu, K Ren, Y Wang, T Li, G Liu, T Guo, L Wu, X Liu, ...
Scientific Reports 8 (1), 6839, 2018
312018
Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation
Y Zheng, Y Zheng, Z Gao, JH Yuan, Y Cheng, Q Zhong, T Xin, Y Wang, ...
2021 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2021
262021
Microscopic mechanism of carbon-dopant manipulating device performance in CGeSbTe-based phase change random access memory
Y Cheng, D Cai, Y Zheng, S Yan, L Wu, C Li, W Song, T Xin, S Lv, ...
ACS applied materials & interfaces 12 (20), 23051-23059, 2020
252020
Mechanism of SiOx particles formation during CVD graphene growth on Cu substrates
X Ge, Y Zhang, L Chen, Y Zheng, Z Chen, Y Liang, S Hu, J Li, Y Sui, G Yu, ...
Carbon 139, 989-998, 2018
252018
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