Rachel S. Goldman
Rachel S. Goldman
Professor of Materials Science and Engineering, University of Michigan
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Anomalous moment and anisotropy behavior in Fe 3 O 4 films
DT Margulies, FT Parker, FE Spada, RS Goldman, J Li, R Sinclair, ...
Physical Review B 53 (14), 9175, 1996
Growth, disorder, and physical properties of ZnSnN2
N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ...
Applied Physics Letters 103 (4), 2013
Effects of GaAs substrate misorientation on strain relaxation in InxGa1− xAs films and multilayers
RS Goldman, KL Kavanagh, HH Wieder, SN Ehrlich, RM Feenstra
Journal of applied physics 83 (10), 5137-5149, 1998
Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi
G Vardar, SW Paleg, MV Warren, M Kang, S Jeon, RS Goldman
Applied Physics Letters 102 (4), 2013
Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
B Lita, RS Goldman, JD Phillips, PK Bhattacharya
Applied physics letters 74 (19), 2824-2826, 1999
Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting
M Tabbal, T Kim, JM Warrender, MJ Aziz, BL Cardozo, RS Goldman
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots
B Lita, RS Goldman, JD Phillips, PK Bhattacharya
Applied Physics Letters 75 (18), 2797-2799, 1999
Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution
E Fahrenkrug, J Gu, S Jeon, PA Veneman, RS Goldman, S Maldonado
Nano letters 14 (2), 847-852, 2014
Mechanisms of nitrogen incorporation in GaAsN alloys
M Reason, HA McKay, W Ye, S Hanson, RS Goldman, V Rotberg
Applied physics letters 85 (10), 1692-1694, 2004
Atomic‐scale structure and electronic properties of GaN/GaAs superlattices
RS Goldman, RM Feenstra, BG Briner, ML O’steen, RJ Hauenstein
Applied physics letters 69 (24), 3698-3700, 1996
Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers
C Lavoie, T Pinnington, E Nodwell, T Tiedje, RS Goldman, KL Kavanagh, ...
Applied physics letters 67 (25), 3744-3746, 1995
Investigation of the influence of a writing-to-learn assignment on student understanding of polymer properties
SA Finkenstaedt-Quinn, AS Halim, TG Chambers, A Moon, RS Goldman, ...
Journal of Chemical Education 94 (11), 1610-1617, 2017
Evolution of structural and electronic properties of highly mismatched InSb films
X Weng, RS Goldman, DL Partin, JP Heremans
Journal of Applied Physics 88 (11), 6276-6286, 2000
Generation and Propagation of a Picosecond Acoustic Pulse at a Buried Interface:<? format?> Time-Resolved X-Ray Diffraction Measurements
SH Lee, AL Cavalieri, DM Fritz, MC Swan, RS Hegde, M Reason, ...
Physical review letters 95 (24), 246104, 2005
Observation of surface-avoiding waves: a new class of extended states in periodic media
M Trigo, TA Eckhause, M Reason, RS Goldman, R Merlin
Physical review letters 97 (12), 124301, 2006
Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs (001) interfaces
RS Goldman, HH Wieder, KL Kavanagh
Applied physics letters 67 (3), 344-346, 1995
Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
H Chen, RM Feenstra, RS Goldman, C Silfvenius, G Landgren
Applied Physics Letters 72 (14), 1727-1729, 1998
Influence of N interstitials on the electronic properties of GaAsN alloys
Y Jin, RM Jock, H Cheng, Y He, AM Mintarov, Y Wang, C Kurdak, JL Merz, ...
Applied Physics Letters 95 (6), 2009
Influence of N on the electronic properties of GaAsN alloy films and heterostructures
M Reason, Y Jin, HA McKay, N Mangan, D Mao, RS Goldman, X Bai, ...
Journal of Applied Physics 102 (10), 2007
Effects of buffer layers on the structural and electronic properties of InSb films
X Weng, NG Rudawski, PT Wang, RS Goldman, DL Partin, J Heremans
Journal of applied physics 97 (4), 2005
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