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Rachel S. Goldman
Rachel S. Goldman
Professor of Materials Science and Engineering, University of Michigan
Verified email at umich.edu
Title
Cited by
Cited by
Year
Anomalous moment and anisotropy behavior in Fe 3 O 4 films
DT Margulies, FT Parker, FE Spada, RS Goldman, J Li, R Sinclair, ...
Physical Review B 53 (14), 9175, 1996
5111996
Growth, disorder, and physical properties of ZnSnN2
N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ...
Applied Physics Letters 103 (4), 2013
1492013
Effects of GaAs substrate misorientation on strain relaxation in InxGa1− xAs films and multilayers
RS Goldman, KL Kavanagh, HH Wieder, SN Ehrlich, RM Feenstra
Journal of applied physics 83 (10), 5137-5149, 1998
1391998
Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi
G Vardar, SW Paleg, MV Warren, M Kang, S Jeon, RS Goldman
Applied Physics Letters 102 (4), 2013
942013
Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
B Lita, RS Goldman, JD Phillips, PK Bhattacharya
Applied physics letters 74 (19), 2824-2826, 1999
931999
Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting
M Tabbal, T Kim, JM Warrender, MJ Aziz, BL Cardozo, RS Goldman
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
872007
Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots
B Lita, RS Goldman, JD Phillips, PK Bhattacharya
Applied Physics Letters 75 (18), 2797-2799, 1999
811999
Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution
E Fahrenkrug, J Gu, S Jeon, PA Veneman, RS Goldman, S Maldonado
Nano letters 14 (2), 847-852, 2014
672014
Mechanisms of nitrogen incorporation in GaAsN alloys
M Reason, HA McKay, W Ye, S Hanson, RS Goldman, V Rotberg
Applied physics letters 85 (10), 1692-1694, 2004
652004
Atomic‐scale structure and electronic properties of GaN/GaAs superlattices
RS Goldman, RM Feenstra, BG Briner, ML O’steen, RJ Hauenstein
Applied physics letters 69 (24), 3698-3700, 1996
651996
Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers
C Lavoie, T Pinnington, E Nodwell, T Tiedje, RS Goldman, KL Kavanagh, ...
Applied physics letters 67 (25), 3744-3746, 1995
611995
Investigation of the influence of a writing-to-learn assignment on student understanding of polymer properties
SA Finkenstaedt-Quinn, AS Halim, TG Chambers, A Moon, RS Goldman, ...
Journal of Chemical Education 94 (11), 1610-1617, 2017
572017
Evolution of structural and electronic properties of highly mismatched InSb films
X Weng, RS Goldman, DL Partin, JP Heremans
Journal of Applied Physics 88 (11), 6276-6286, 2000
572000
Generation and Propagation of a Picosecond Acoustic Pulse at a Buried Interface:<? format?> Time-Resolved X-Ray Diffraction Measurements
SH Lee, AL Cavalieri, DM Fritz, MC Swan, RS Hegde, M Reason, ...
Physical review letters 95 (24), 246104, 2005
512005
Observation of surface-avoiding waves: a new class of extended states in periodic media
M Trigo, TA Eckhause, M Reason, RS Goldman, R Merlin
Physical review letters 97 (12), 124301, 2006
502006
Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs (001) interfaces
RS Goldman, HH Wieder, KL Kavanagh
Applied physics letters 67 (3), 344-346, 1995
481995
Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
H Chen, RM Feenstra, RS Goldman, C Silfvenius, G Landgren
Applied Physics Letters 72 (14), 1727-1729, 1998
441998
Influence of N interstitials on the electronic properties of GaAsN alloys
Y Jin, RM Jock, H Cheng, Y He, AM Mintarov, Y Wang, C Kurdak, JL Merz, ...
Applied Physics Letters 95 (6), 2009
432009
Influence of N on the electronic properties of GaAsN alloy films and heterostructures
M Reason, Y Jin, HA McKay, N Mangan, D Mao, RS Goldman, X Bai, ...
Journal of Applied Physics 102 (10), 2007
422007
Effects of buffer layers on the structural and electronic properties of InSb films
X Weng, NG Rudawski, PT Wang, RS Goldman, DL Partin, J Heremans
Journal of applied physics 97 (4), 2005
422005
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