| A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 13575, 2016 | 495 | 2016 |
| Advances, challenges and opportunities in 3D CMOS sequential integration P Batude, M Vinet, B Previtali, C Tabone, C Xu, J Mazurier, O Weber, ... 2011 International Electron Devices Meeting, 7.3. 1-7.3. 4, 2011 | 343 | 2011 |
| Advances in 3D CMOS sequential integration P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 332 | 2009 |
| Single-donor ionization energies in a nanoscale CMOS channel M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto Nature nanotechnology 5 (2), 133-137, 2010 | 304 | 2010 |
| Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ... 2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010 | 272 | 2010 |
| 3D monolithic integration: Technological challenges and electrical results M Vinet, P Batude, C Tabone, B Previtali, C LeRoyer, A Pouydebasque, ... Microelectronic Engineering 88 (4), 331-335, 2011 | 258 | 2011 |
| 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications R Carter, J Mazurier, L Pirro, JU Sachse, P Baars, J Faul, C Grass, ... 2016 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2016 | 237 | 2016 |
| Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors P Coudrain, P Batude, X Gagnard, C Leyris, S Ricq, M Vinet, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 225 | 2008 |
| Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length P Batude, M Vinet, C Xu, B Previtali, C Tabone, C Le Royer, L Sanchez, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 158-159, 2011 | 224 | 2011 |
| Multi-UTBB FDSOI Device Architectures for Low-Power CMOS Circuit JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ... IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011 | 211 | 2011 |
| 3D monolithic integration P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ... 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2233-2236, 2011 | 207 | 2011 |
| Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT P Batude, L Clavelier, MA Jaud, O Thomas, M Vinet US Patent 8,183,630, 2012 | 199 | 2012 |
| SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable O Thomas, P Batude, A Pouydebasque, M Vinet US Patent 8,013,399, 2011 | 177 | 2011 |
| Germanium on Insulator and new 3D architectures opportunities for integration M Vinet, C Le Royer, P Batude, JF Damlencourt, JM Hartmann, L Hutin, ... International Journal of Nanotechnology 7 (4-8), 304-319, 2010 | 169 | 2010 |
| Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit E Augendre, M Vinet, L Clavelier, P Batude US Patent 8,853,785, 2014 | 154 | 2014 |
| Multiple gate devices: advantages and challenges T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, T Ernst, B Previtali, ... Microelectronic Engineering 80, 378-385, 2005 | 151 | 2005 |
| Bonded planar double-metal-gate NMOS transistors down to 10 nm M Vinet, T Poiroux, J Widiez, J Lolivier, B Previtali, C Vizioz, B Guillaumot, ... IEEE Electron Device Letters 26 (5), 317-319, 2005 | 141 | 2005 |
| 3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015 | 138 | 2015 |
| GeOI pMOSFETs scaled down to 30-nm gate length with record off-state current L Hutin, C Le Royer, JF Damlencourt, JM Hartmann, H Grampeix, ... IEEE Electron Device Letters 31 (3), 234-236, 2010 | 134 | 2010 |
| A two-atom electron pump B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ... Nature Communications 4 (1), 1581, 2013 | 133 | 2013 |
Tristan MeunierCNRS-Institut NéelVerified email at neel.cnrs.fr
