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Sangmin Yoo
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Year
Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching
Y Li, EJ Fuller, JD Sugar, S Yoo, DS Ashby, CH Bennett, RD Horton, ...
Advanced Materials 32 (45), 2003984, 2020
1022020
Adaptive synaptic memory via lithium ion modulation in RRAM devices
CY Lin, J Chen, PH Chen, TC Chang, Y Wu, JK Eshraghian, J Moon, ...
Small 16 (42), 2003964, 2020
582020
Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity
S Yoo, Y Wu, Y Park, WD Lu
Advanced Electronic Materials 8 (8), 2101025, 2022
72022
RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator
Y Park, Z Wang, S Yoo, WD Lu
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022
52022
Columnar Learning Networks for Multisensory Spatiotemporal Learning
S Yoo, Y Park, Z Wang, Y Wu, S Medepalli, W Thio, WD Lu
Advanced Intelligent Systems 4 (11), 2200179, 2022
32022
RN-Net: Reservoir Nodes-Enabled Neuromorphic Vision Sensing Network
S Yoo, EYJ Lee, Z Wang, X Wang, WD Lu
arXiv preprint arXiv:2303.10770, 2023
12023
Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)
Y Li, EJ Fuller, JD Sugar, S Yoo, DS Ashby, CH Bennett, RD Horton, ...
Advanced Materials 32 (45), 2070339, 2020
12020
PowerGAN: A Machine Learning Approach for Power Side‐Channel Attack on Compute‐in‐Memory Accelerators
Z Wang, Y Wu, Y Park, S Yoo, X Wang, JK Eshraghian, WD Lu
Advanced Intelligent Systems 5 (12), 2300313, 2023
2023
Thermodynamic origin of nonvolatility in resistive switching
Y Li, J Li, A Appachar, S Peczonczyk, E Harrison, B Roest, A Ievlev, ...
2022
Spatiotemporal Spike Pattern Detection with Second-order Memristive Synapses
Y Wu, S Yoo, FH Meng, WD Lu
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 625-628, 2022
2022
Method for fabricating a semiconductor device
E Hwang, J Kim, H Na, B Suh, S Yoo, J Jung, S Lee
US Patent 20210265351A1, 2021
2021
Semiconductor devices
S Yoo, B Kim, J Kim, B Suh, H Na, S Lee, J Jung, E Hwang
US Patent 011063150B2, 2021
2021
Semiconductor devices including diffusion break regions
J Park, J Kim, H Na, S Yoo, E Hwang
US Patent 20210118885A1, 2021
2021
Semiconductor device and method for fabricating the same
S Yoo, J Kim, H Na, B Suh, J Jung, E Hwang, S Lee
US Patent 20210005603A1, 2021
2021
FINFETs having electrically insulating diffusion break regions therein and methods of forming same
H Na, J Kim, B Suh, S Yoo, J Jung, E Hwang, S Lee
US Patent 010636793B2, 2020
2020
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