Mehdi Saremi
Mehdi Saremi
Researcher
Verified email at asu.edu
Title
Cited by
Cited by
Year
Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
M Saremi, A Afzali-Kusha, S Mohammadi
Microelectronic Engineering 95, 74-82, 2012
1132012
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance
RM Imenabadi, M Saremi, WG Vandenberghe
IEEE transactions on electron devices 64 (11), 4752-4758, 2017
802017
Modeling of lightly doped drain and source graphene nanoribbon field effect transistors
M Saremi, M Saremi, H Niazi, AY Goharrizi
Superlattices and Microstructures 60, 67-72, 2013
752013
Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping
AY Goharrizi, M Zoghi, M Saremi
IEEE Transactions on Electron Devices 63 (9), 3761-3768, 2016
642016
A resonant tunneling nanowire field effect transistor with physical contractions: a negative differential resistance device for low power very large scale integration applications
RMI Abadi, M Saremi
Journal of Electronic Materials 47 (2), 1091-1098, 2018
562018
Band gap tuning of armchair graphene nanoribbons by using antidotes
M Zoghi, AY Goharrizi, M Saremi
Journal of Electronic Materials 46 (1), 340-346, 2017
482017
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi
Microelectronics Reliability 51 (12), 2069-2076, 2011
482011
Process variation study of ground plane SOI MOSFET
M Saremi, B Ebrahimi, AA Kusha, M Saremi
2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010
392010
Analysis of the reverse IV characteristics of diamond-based PIN diodes
M Saremi, R Hathwar, M Dutta, FAM Koeck, RJ Nemanich, S Chowdhury, ...
Applied Physics Letters 111 (4), 043507, 2017
362017
A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells
M Saremi
Solid State Ionics 290, 1-5, 2016
322016
SOI LDMOSFET with up and down extended stepped drift region
M Saremi, M Saremi, H Niazi, M Saremi, AY Goharrizi
Journal of Electronic Materials 46 (10), 5570-5576, 2017
312017
Static impedance behavior of programmable metallization cells
S Rajabi, M Saremi, HJ Barnaby, A Edwards, MN Kozicki, M Mitkova, ...
Solid-State Electronics 106, 27-33, 2015
312015
Ground plane SOI MOSFET based SRAM with consideration of process variation
M Saremi, B Ebrahimi, A Afzali-Kusha
2010 IEEE international conference of electron devices and solid-state …, 2010
272010
A 4.5 μm PIN diamond diode for detecting slow neutrons
J Holmes, M Dutta, FA Koeck, M Benipal, J Brown, B Fox, R Hathwar, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018
232018
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh
IEICE Electronics Express 9 (10), 881-887, 2012
232012
The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC)
M Saremi, S Rajabi, HJ Barnaby, MN Kozicki
MRS Online Proceedings Library (OPL) 1692, 2014
222014
Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films
M Saremi, HJ Barnaby, A Edwards, MN Kozicki
ECS Electrochemistry Letters 4 (7), H29, 2015
212015
Modeling and simulation of the programmable metallization cells (PMCs) and diamond-based power devices
M Saremi
Arizona State University, 2017
202017
Physically based predictive model for single event transients in CMOS gates
M Saremi, A Privat, HJ Barnaby, LT Clark
IEEE Transactions on Electron Devices 63 (6), 2248-2254, 2016
172016
Carrier mobility extraction method in ChGs in the UV light exposure
M Saremi
Micro & Nano Letters 11 (11), 762-764, 2016
122016
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Articles 1–20