| Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches. K Krishnan, T Tsuruoka, C Mannequin, M Aono Advanced Materials (Deerfield Beach, Fla.) 28 (4), 640-648, 2015 | 149 | 2015 |
| Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure T Tsuruoka, I Valov, C Mannequin, T Hasegawa, R Waser, M Aono Japanese journal of applied physics 55 (6S1), 06GJ09, 2016 | 58 | 2016 |
| Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material T Bertaud, D Walczyk, C Walczyk, S Kubotsch, M Sowinska, T Schroeder, ... Thin Solid Films 520 (14), 4551-4555, 2012 | 54 | 2012 |
| Stress-induced leakage current and trap generation in HfO2 thin films C Mannequin, P Gonon, C Vallée, L Latu-Romain, A Bsiesy, H Grampeix, ... Journal of Applied Physics 112 (7), 2012 | 53 | 2012 |
| On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag) M Saadi, P Gonon, C Vallée, C Mannequin, H Grampeix, E Jalaguier, ... Journal of Applied Physics 119 (11), 2016 | 46 | 2016 |
| Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes C Mannequin, T Tsuruoka, T Hasegawa, M Aono Applied Surface Science 385, 426-435, 2016 | 36 | 2016 |
| Investigation of HfO2 and ZrO2 for resistive random access memory applications A Salaün, H Grampeix, J Buckley, C Mannequin, C Vallée, P Gonon, ... Thin Solid Films 525, 20-27, 2012 | 31 | 2012 |
| Graphene-HfO2-based resistive RAM memories C Mannequin, A Delamoreanu, L Latu-Romain, V Jousseaume, ... Microelectronic Engineering 161, 82-86, 2016 | 30 | 2016 |
| A fully passive RF switch based on nanometric conductive bridge A Vena, E Perret, S Tedjini, C Vallée, P Gonon, C Mannequin 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 27 | 2012 |
| From MEMRISTOR to MEMImpedance device T Wakrim, C Vallée, P Gonon, C Mannequin, A Sylvestre Applied Physics Letters 108 (5), 2016 | 22 | 2016 |
| Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior C Mannequin, T Tsuruoka, T Hasegawa, M Aono Japanese journal of applied physics 55 (6S1), 06GG08, 2016 | 21 | 2016 |
| Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices C Mannequin, P Gonon, C Vallée, A Bsiesy, H Grampeix, V Jousseaume Journal of Applied Physics 110 (10), 2011 | 21 | 2011 |
| Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices O Khaldi, F Jomni, P Gonon, C Mannequin, B Yangui Applied Physics A 116, 1647-1653, 2014 | 19 | 2014 |
| Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction O Khaldi, P Gonon, C Vallée, C Mannequin, M Kassmi, A Sylvestre, ... Journal of Applied Physics 116 (8), 2014 | 19 | 2014 |
| Comparative study of two atomic layer etching processes for GaN C Mannequin, C Vallée, K Akimoto, T Chevolleau, C Durand, C Dussarrat, ... Journal of Vacuum Science & Technology A 38 (3), 2020 | 15 | 2020 |
| Plasma treatment of HfO2-based metal–insulator–metal resistive memories C Vallée, P Gonon, C Mannequin, T Chevolleau, M Bonvalot, H Grampeix, ... Journal of Vacuum Science & Technology A 29 (4), 2011 | 15 | 2011 |
| Stochastic domain-wall depinning under current in FePt spin valves and single layers AP Mihai, F Garcia-Sanchez, L Vila, A Marty, LD Buda-Prejbeanu, ... Physical Review B 84 (1), 014411, 2011 | 13 | 2011 |
| Area selective deposition using alternate deposition and etch super-cycle strategies M Bonvalot, C Vallée, C Mannequin, M Jaffal, R Gassilloud, N Possémé, ... Dalton Transactions 51 (2), 442-450, 2022 | 8 | 2022 |
| Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress O Khaldi, P Gonon, C Mannequin, C Vallée, F Jomni, A Sylvestre ECS Solid State Letters 2 (5), N15, 2013 | 6 | 2013 |
| New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching N Posseme, L Vallier, CL Kao, C Licitra, C Petit-Etienne, C Mannequin, ... 2013 IEEE International Interconnect Technology Conference-IITC, 1-3, 2013 | 5 | 2013 |
