| Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes V Volynets, Y Barsukov, G Kim, JE Jung, SK Nam, K Han, S Huang, ... Journal of Vacuum Science & Technology A 38 (2), 2020 | 28 | 2020 |
| Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation Y Barsukov, V Volynets, S Lee, G Kim, B Lee, SK Nam, K Han Journal of Vacuum Science & Technology A 35 (6), 2017 | 22 | 2017 |
| Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism JE Jung, Y Barsukov, V Volynets, G Kim, SK Nam, K Han, S Huang, ... Journal of Vacuum Science & Technology A 38 (2), 2020 | 18 | 2020 |
| Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation YV Barsukov, V Volynets, AA Kobelev, NA Andrianov, AV Tulub, ... Journal of Vacuum Science & Technology A 36 (6), 2018 | 14 | 2018 |
| Boron trichloride plasma treatment effect on ohmic contact resistance formed on GaN-based epitaxial structure AA Kobelev, YV Barsukov, NA Andrianov, AS Smirnov Journal of Physics: Conference Series 586 (1), 012013, 2015 | 14 | 2015 |
| Boron adatom adsorption on graphene: A case study in computational chemistry methods for surface interactions S Jubin, A Rau, Y Barsukov, S Ethier, I Kaganovich Frontiers in Physics 10, 908694, 2022 | 7 | 2022 |
| Collisional RF sheath in capacitive discharge in strong oblique magnetic field A Kobelev, N Babinov, Y Barsukov, T Chernoizumskaya, A Dmitriev, ... Physics of Plasmas 26 (1), 2019 | 7 | 2019 |
| Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures NA Andrianov, AA Kobelev, AS Smirnov, YV Barsukov, YM Zhukov Technical Physics 62, 436-440, 2017 | 7 | 2017 |
| Boron Trichloride Dry Etching A Kobelev, N Andrianov, Y Barsukov, A Smirnov Encyclopedia of Plasma Technology, 2016 | 7 | 2016 |
| Comparison of zinc and magnesium clusters in their reaction with organochlorides: Toward a molecular picture of grignard reagent formation YV Barsukov, VV Porsev, AV Tulub International Journal of Quantum Chemistry 112 (18), 3002-3007, 2012 | 6 | 2012 |
| Boron nitride nanotube precursor formation during high-temperature synthesis: Kinetic and thermodynamic modelling Y Barsukov, O Dwivedi, I Kaganovich, S Jubin, A Khrabry, S Ethier arXiv preprint arXiv:2105.05934, 2021 | 5 | 2021 |
| Systematic quantum chemical research of the reaction of magnesium clusters with organic halides VV Porsev, YV Barsukov, AV Tulub Computational and Theoretical Chemistry 995, 55-65, 2012 | 5 | 2012 |
| Compact and accurate chemical mechanism for methane pyrolysis with PAH growth A Khrabry, ID Kaganovich, Y Barsukov, S Raman, E Turkoz, D Graves International Journal of Hydrogen Energy 56, 1340-1360, 2024 | 4 | 2024 |
| Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study OD Dwivedi, Y Barsukov, S Jubin, JR Vella, I Kaganovich Journal of Vacuum Science & Technology A 41 (5), 2023 | 3 | 2023 |
| Etching of Si3N4 by SF6/H2 and SF6/D2 plasmas PA Pankratiev, YV Barsukov, AA Kobelev, AY Vinogradov, IV Miroshnikov, ... Journal of Physics: Conference Series 1697 (1), 012222, 2020 | 3 | 2020 |
| Integrated modeling of carbon and boron nitride nanotubes synthesis in plasma of high-pressure arc I Kaganovich, J Chen, A Khrabry, A Khodak, Y Barsukov, O Dwiwedi, ... APS Annual Gaseous Electronics Meeting Abstracts, XF4. 007, 2020 | 3 | 2020 |
| Selective SiN/SiO2 etching by SF6/H2/Ar/He plasma P Pankratiev, Y Barsukov, A Vinogradov, V Volynets, A Kobelev, ... AIP Conference Proceedings 2179 (1), 2019 | 2 | 2019 |
| Gibbs free energies of Fe clusters can be approximated by Tolman correction to accurately model cluster nucleation and growth A Khrabry, LES Hoffenberg, ID Kaganovich, Y Barsukov, DB Graves arXiv preprint arXiv:2408.16693, 2024 | 1 | 2024 |
| Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method KIM Gon-Jun, Y Barsukov, V Volynets, D Liu, S An, B Yoo, SH Lee, ... US Patent 10,418,250, 2019 | 1 | 2019 |
| Pulsed plasma analyzer and method for analyzing the same V Volynets, P Vladimir, Y Do Kim, Y Barsukov, SH Lee, SH Jang US Patent 10,249,485, 2019 | 1 | 2019 |
Igor KaganovichPrinceton University, Princeton Plasma Physics LaboratoryVerified email at pppl.gov
