| Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices L Cheng, J Lee, H Zhu, AV Ravichandran, Q Wang, AT Lucero, MJ Kim, ... ACS nano 11 (10), 10243-10252, 2017 | 46 | 2017 |
| Atomic layer deposition of layered boron nitride for large-area 2D electronics J Lee, AV Ravichandran, J Mohan, L Cheng, AT Lucero, H Zhu, Z Che, ... ACS applied materials & interfaces 12 (32), 36688-36694, 2020 | 25 | 2020 |
| Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 18 | 2020 |
| Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ... IEEE Electron Device Letters 39 (8), 1195-1198, 2018 | 13 | 2018 |
| Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ... ACS Applied Nano Materials 4 (3), 2558-2564, 2021 | 11 | 2021 |
| High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ... Journal of Materials Chemistry C 8 (37), 13033-13039, 2020 | 10 | 2020 |
| Ozone based high-temperature atomic layer deposition of SiO2 thin films SM Hwang, Z Qin, HS Kim, A Ravichandran, YC Jung, SJ Kim, J Ahn, ... Japanese Journal of Applied Physics 59 (SI), SIIG05, 2020 | 6 | 2020 |
| Ambipolar gate modulation technique for the reduction of offset and flicker noise in graphene Hall-effect sensors A Polley, AV Ravichandran, VS Kumar, A Venugopal, L Cheng, AT Lucero, ... IEEE Sensors Journal 21 (22), 25675-25686, 2021 | 2 | 2021 |
| Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide AV Ravichandran, J Lee, L Cheng, AT Lucero, CD Young, L Colombo, ... ECS Transactions 86 (2), 51, 2018 | 1 | 2018 |
| Methods and systems for filling gap features on substrate surfaces Y Cabrera, YC Byun, AV Ravichandran, S Luiso, SH Yu, MB Mousa US Patent App. 18/119,884, 2023 | | 2023 |
| Systems and methods for cleaning and treating a surface of a substrate YC Byun, MB Mousa, D Li, AV Ravichandran, Y Cabrera, S Luiso US Patent App. 18/147,038, 2023 | | 2023 |
| Metal-on-metal deposition methods for filling a gap feature on a substrate surface S Luiso, YC Byun, H Saare, LEE Jaebeom, S Datta, J Kim, P Raisanen, ... US Patent App. 18/148,687, 2023 | | 2023 |
| Metal-on-metal deposition methods for filling a gap feature on a substrate surface J Kim, YC Byun, P Raisanen, D Li, EJ Shero, Y Cabrera, ... US Patent App. 17/989,760, 2023 | | 2023 |
| Graphene Mobility Dependence on the Resistivity of Si Wafer A Ravichandran, L Cheng, AT Lucero, J Lee, CD Young, A Venugopal, ... Electrochemical Society Meeting Abstracts prime2020, 3550-3550, 2020 | | 2020 |
| Evaluation and Integration of Graphene Field Effect Devices AV Ravichandran The University of Texas at Dallas, 2020 | | 2020 |
| The Graphene Field Effect Transistor: A Large Scale Integration Approach AV Ravichandran | | 2016 |
Jiyoung KimProfessor of Materials Science and Engineering, University of Texas at DallasVerified email at utdallas.edu
