| Modeling of short-channel effects in DG MOSFETs: Green’s function method versus scale length model N Pandey, HH Lin, A Nandi, Y Taur IEEE Transactions on Electron Devices 65 (8), 3112-3119, 2018 | 33 | 2018 |
| Modeling of DG MOSFET–Characteristics in the Saturation Region Y Taur, HH Lin IEEE Transactions on Electron Devices 65 (5), 1714-1720, 2018 | 25 | 2018 |
| Effect of source–drain doping on subthreshold characteristics of short-channel DG MOSFETs HH Lin, Y Taur IEEE Transactions on Electron Devices 64 (12), 4856-4860, 2017 | 22 | 2017 |
| Surface nonuniformity-induced frequency dispersion in accumulation capacitance for silicon MOS (n) capacitor HH Lin, JG Hwu IEEE Transactions on Electron Devices 63 (7), 2844-2851, 2016 | 4 | 2016 |
| Non-Uniform Hole Current Induced Negative Capacitance Phenomenon Examined by Photo-Illumination in MOS(n) HH Lin, YK Lin, JG Hwu ECS Transactions 69 (5), 261-265, 2015 | 3 | 2015 |
| Characterization of ambient light-induced inversion current in MOS (n) tunneling diode with enhanced oxide thickness-dependent performance YK Lin, HH Lin, JG Hwu IEEE Transactions on Electron Devices 63 (1), 384-389, 2015 | 2 | 2015 |
| Influence of etching-induced surface damage on device performance with consideration of minority carriers within diffusion length from depletion edge HH Lin, JG Hwu IEEE Transactions on Electron Devices 62 (2), 634-640, 2015 | 1 | 2015 |
| Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effect HH Lin, JG Hwu ECS Transactions 75 (5), 63, 2016 | | 2016 |
| Investigation of Inversion Characteristics of Non-planar MOS Structures HH Lin, JG Hwu Electronic Devices and Materials Symposium - IEDMS 2013 Section 5, Paper No.3., 2013 | | 2013 |
| 在非平面矽基板生長閘極氧化層之金氧半電容元件於反轉區之特性探討 林黃玄 國立臺灣大學, 2013 | | 2013 |
