Uttam Singisetti
Uttam Singisetti
Professor, Electrical Engineering, Univeristy at Buffalo (SUNY)
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Cited by
Cited by
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
N-polar GaN epitaxy and high electron mobility transistors
M. H. Wong, S. Keller, S. Dasgupta, D. J. Denninghoff, S. Kolluri, D. F ...
Semiconductor Science and Technology 28 (7), 074009, 2013
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
M Kim, JH Seo, U Singisetti, Z Ma
Journal of Materials Chemistry C 5 (33), 8338-8354, 2017
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs
K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
Ab initio velocity-field curves in monoclinic β-Ga2O3
K Ghosh, U Singisetti
Journal of Applied Physics 122 (3), 2017
Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi
IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019
Impact ionization in β-Ga2O3
K Ghosh, U Singisetti
Journal of Applied Physics 124 (8), 2018
Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal
K Ghosh, U Singisetti
Applied Physics Letters 109 (7), 2016
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
G He, K Ghosh, U Singisetti, H Ramamoorthy, R Somphonsane, G Bohra, ...
Nano letters 15 (8), 5052-5058, 2015
Interface State Density in Atomic Layer Deposited SiO2/-Ga2O3() MOSCAPs
K Zeng, Y Jia, U Singisetti
IEEE Electron Device Letters 37 (7), 906-909, 2016
Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement
K Ghosh, U Singisetti
Journal of Materials Research 32 (22), 4142-4152, 2017
Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01)
Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti
Applied Physics Letters 106 (10), 2015
Ultralow resistance in situ Ohmic contacts to InGaAs/InP
U.Singisetti, M.A.Wistey, J.Zimmerman, B.Thibeault, A.Gossard, M.Rodwell
Applied Physics Letters 93, 183502, 2008
A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance
K Zeng, A Vaidya, U Singisetti
Applied Physics Express 12 (8), 081003, 2019
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth
U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
IEEE Electron Device Letters 32 (2), 137-139, 2010
Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes
E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ...
Advanced Electronic Materials 5 (3), 1800714, 2019
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