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Gilles Patriarche
Gilles Patriarche
Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris Sud, Université Paris
Verified email at c2n.upsaclay.fr
Title
Cited by
Cited by
Year
Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche
Physical review letters 99 (14), 146101, 2007
9272007
Core/shell colloidal semiconductor nanoplatelets
B Mahler, B Nadal, C Bouet, G Patriarche, B Dubertret
Journal of the American Chemical Society 134 (45), 18591-18598, 2012
4402012
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ...
Applied Physics Letters 87 (20), 2005
3602005
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ...
Nano letters 16 (7), 4054-4061, 2016
3302016
Crystal phase quantum dots
N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller
Nano letters 10 (4), 1198-1201, 2010
2982010
Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets
MD Tessier, P Spinicelli, D Dupont, G Patriarche, S Ithurria, B Dubertret
Nano letters 14 (1), 207-213, 2014
2972014
From excitonic to photonic polariton condensate in a ZnO-based microcavity
F Li, L Orosz, O Kamoun, S Bouchoule, C Brimont, P Disseix, T Guillet, ...
Physical review letters 110 (19), 196406, 2013
2212013
Predictive modeling of self-catalyzed III-V nanowire growth
F Glas, MR Ramdani, G Patriarche, JC Harmand
Physical Review B 88 (19), 195304, 2013
2152013
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
2092001
Type-II CdSe/CdTe core/crown semiconductor nanoplatelets
S Pedetti, S Ithurria, H Heuclin, G Patriarche, B Dubertret
Journal of the American Chemical Society 136 (46), 16430-16438, 2014
2042014
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
1912007
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ...
Nature Photonics 14 (6), 375-382, 2020
1872020
Infrared photodetection based on colloidal quantum-dot films with high mobility and optical absorption up to THz
E Lhuillier, M Scarafagio, P Hease, B Nadal, H Aubin, XZ Xu, N Lequeux, ...
Nano letters 16 (2), 1282-1286, 2016
1802016
Gradient CdSe/CdS quantum dots with room temperature biexciton unity quantum yield
M Nasilowski, P Spinicelli, G Patriarche, B Dubertret
Nano letters 15 (6), 3953-3958, 2015
1752015
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers
Crystal Growth & Design 13 (1), 91-96, 2013
1742013
van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties
Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ...
ACS nano 10 (10), 9679-9686, 2016
1712016
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
1692007
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
1662007
Sub-5 nm FIB direct patterning of nanodevices
J Gierak, A Madouri, AL Biance, E Bourhis, G Patriarche, C Ulysse, ...
Microelectronic engineering 84 (5-8), 779-783, 2007
1652007
Atomic step flow on a nanofacet
JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ...
Physical review letters 121 (16), 166101, 2018
1592018
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