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Seung Chul Chae
Seung Chul Chae
Verified email at snu.ac.kr
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Cited by
Year
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
3752008
Scale-free ferroelectricity induced by flat phonon bands in HfO2
HJ Lee, M Lee, K Lee, J Jo, H Yang, Y Kim, SC Chae, U Waghmare, ...
Science 369 (6509), 1343-1347, 2020
2842020
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
SH Chang, JS Lee, SC Chae, SB Lee, C Liu, B Kahng, DW Kim, TW Noh
Physical review letters 102 (2), 026801, 2009
2812009
Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs
SC Chae, N Lee, Y Horibe, M Tanimura, S Mori, B Gao, S Carr, ...
Physical review letters 108 (16), 167603, 2012
2112012
Effects of heat dissipation on unipolar resistance switching in Pt∕ NiO∕ Pt capacitors
SH Chang, SC Chae, SB Lee, C Liu, TW Noh, JS Lee, B Kahng, JH Jang, ...
Applied Physics Letters 92 (18), 2008
1882008
Magnetoelectric effects of nanoparticulate Pb (Zr0. 52Ti0. 48) O3–NiFe2O4 composite films
H Ryu, P Murugavel, JH Lee, SC Chae, TW Noh, YS Oh, HJ Kim, KH Kim, ...
Applied Physics Letters 89 (10), 2006
1772006
Flexoelectric Effect in the Reversal of Self‐Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films
BC Jeon, D Lee, MH Lee, SM Yang, SC Chae, TK Song, SD Bu, ...
Advanced Materials 25 (39), 5643-5649, 2013
1542013
Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
SM Park, B Wang, S Das, SC Chae, JS Chung, JG Yoon, LQ Chen, ...
Nature nanotechnology 13 (5), 366-370, 2018
1452018
Oxide double‐layer nanocrossbar for ultrahigh‐density bipolar resistive memory
SH Chang, SB Lee, DY Jeon, SJ Park, GT Kim, SM Yang, SC Chae, ...
Advanced materials 23 (35), 4063-4067, 2011
1432011
Self-organization, condensation, and annihilation of topological vortices and antivortices in a multiferroic
SC Chae, Y Horibe, DY Jeong, S Rodan, N Lee, SW Cheong
Proceedings of the National Academy of Sciences 107 (50), 21366-21370, 2010
1192010
Scaling behaviors of reset voltages and currents in unipolar resistance switching
SB Lee, SC Chae, SH Chang, JS Lee, S Seo, B Kahng, TW Noh
Applied Physics Letters 93 (21), 2008
1172008
Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite
MG Han, Y Zhu, L Wu, T Aoki, V Volkov, X Wang, SC Chae, YS Oh, ...
arXiv preprint arXiv:1303.3593, 2013
1112013
Role of structural defects in the unipolar resistive switching characteristics of Pt∕ NiO∕ Pt structures
C Park, SH Jeon, SC Chae, S Han, BH Park, S Seo, DW Kim
Applied Physics Letters 93 (4), 2008
1112008
La-doped BaSnO3—Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
S Sallis, DO Scanlon, SC Chae, NF Quackenbush, DA Fischer, JC Woicik, ...
Applied Physics Letters 103 (4), 2013
1042013
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
TY Lee, K Lee, HH Lim, MS Song, SM Yang, HK Yoo, DI Suh, Z Zhu, ...
ACS applied materials & interfaces 11 (3), 3142-3149, 2018
982018
Selective electrocatalysis imparted by metal–insulator transition for durability enhancement of automotive fuel cells
SM Jung, SW Yun, JH Kim, SH You, J Park, S Lee, SH Chang, SC Chae, ...
Nature Catalysis 3 (8), 639-648, 2020
852020
Epitaxial brownmillerite oxide thin films for reliable switching memory
SK Acharya, RV Nallagatla, O Togibasa, BW Lee, C Liu, CU Jung, ...
ACS Applied Materials & Interfaces 8 (12), 7902-7911, 2016
832016
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
K Lee, HJ Lee, TY Lee, HH Lim, MS Song, HK Yoo, DI Suh, JG Lee, Z Zhu, ...
ACS applied materials & interfaces 11 (42), 38929-38936, 2019
612019
Large 1/f noise of unipolar resistance switching and its percolating nature
SB Lee, S Park, JS Lee, SC Chae, SH Chang, MH Jung, Y Jo, B Kahng, ...
Applied Physics Letters 95 (12), 2009
592009
Evolution of the domain topology in a ferroelectric
SC Chae, Y Horibe, DY Jeong, N Lee, K Iida, M Tanimura, SW Cheong
Physical review letters 110 (16), 167601, 2013
552013
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