Kathleen Meehan
Cited by
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Radical nanomedicine
BA Rzigalinski, K Meehan, RM Davis, Y Xu, WC Miles, CA Cohen
Future Medicine Ltd 1 (4), 399-412, 2006
High‐power disorder‐defined coupled stripe AlyGa1yAs‐GaAs‐InxGa1xAs quantum well heterostructure lasers
JS Major Jr, DC Hall, LJ Guido, N Holonyak Jr, P Gavrilovic, K Meehan, ...
Applied physics letters 55 (3), 271-273, 1989
Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
K Meehan, N Holonyak Jr, JM Brown, MA Nixon, P Gavrilovic, ...
Applied physics letters 45 (5), 549-551, 1984
Implantation disordering of AlxGa1xAs superlattices
P Gavrilovic, DG Deppe, K Meehan, N Holonyak Jr, JJ Coleman, ...
Applied physics letters 47 (2), 130-132, 1985
Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element
N Shehata, K Meehan, M Hudait, N Jain
Journal of Nanoparticle Research 14, 1-10, 2012
Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing
P Gavrilovic, FP Dabkowski, K Meehan, JE Williams, W Stutius, KC Hsieh, ...
Journal of Crystal Growth 93 (1-4), 426-433, 1988
Characteristics of light‐emitting diodes based on GaN pn junctions grown by plasma‐assisted molecular beam epitaxy
RP Vaudo, ID Goepfert, TD Moustakas, DM Beyea, TJ Frey, K Meehan
Journal of applied physics 79 (5), 2779-2783, 1996
Transient capacitance spectroscopy on large quantum well heterostructures
PA Martin, K Meehan, P Gavrilovic, K Hess, N Holonyak Jr, JJ Coleman
Journal of applied physics 54 (8), 4689-4691, 1983
Band gap of ‘‘completely disordered’’ Ga0.52In0.48P
MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, JE Williams, K Meehan, ...
Applied physics letters 66 (23), 3185-3187, 1995
Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering
K Meehan, P Gavrilović, N Holonyak Jr, RD Burnham, RL Thornton
Applied physics letters 46 (1), 75-77, 1985
Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion
FP Dabkowski, P Gavrilovic, K Meehan, W Stutius, JE Williams, ...
Applied physics letters 52 (25), 2142-2144, 1988
Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser
P Gavrilovic, K Meehan, JE Epler, N Holonyak Jr, RD Burnham, ...
Applied physics letters 46 (9), 857-859, 1985
Stripe‐geometry AlGaAs‐GaAs quantum‐well heterostructure lasers defined by impurity‐induced layer disordering
K Meehan, JM Brown, N Holonyak Jr, RD Burnham, TL Paoli, W Streifer
Applied physics letters 44 (7), 700-702, 1984
Continuous operation of high-power (200 mW) strained-layer Ga1− xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87≤ λ≤ 0.95 μm
W Stutius, P Gavrilovic, JE Williams, K Meehan, JH Zarrabi
Electronics Letters 24 (24), 1493-1494, 1988
Fabrication of integral lenses on LED devices
GP Watson, K Meehan
US Patent 4,797,179, 1989
Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices
RW Kaliski, P Gavrilovic, K Meehan, J Gavrilovic, KC Hsieh, GS Jackson, ...
Journal of applied physics 58 (1), 101-107, 1985
Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down-and up-conversions
N Shehata, K Meehan, I Hassounah, M Hudait, N Jain, M Clavel, S Elhelw, ...
Nanoscale research letters 9, 1-6, 2014
High-voltage capacitance measurement system for SiC power MOSFETs
P Ralston, TH Duong, N Yang, DW Berning, C Hood, AR Hefner, ...
2009 IEEE Energy Conversion Congress and Exposition, 1472-1479, 2009
Thermal‐anneal wavelength modification of multiple‐well pn AlxGa1−x As‐GaAs quantum‐well lasers
K Meehan, JM Brown, P Gavrilovic, N Holonyak Jr, RD Burnham, TL Paoli, ...
Journal of applied physics 55 (7), 2672-2675, 1984
Temperature‐tunable, single frequency microcavity lasers fabricated from flux‐grown YCeAG: Nd
P Gavrilovic, MS O’Neill, K Meehan, JH Zarrabi, S Singh, WH Grodkiewicz
Applied physics letters 60 (14), 1652-1654, 1992
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