| Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC AF Hamida, Z Ouennoughi, A Sellai, R Weiss, H Ryssel Semiconductor Science and Technology 23 (4), 045005, 2008 | 87 | 2008 |
| Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method A Ferhat-Hamida, Z Ouennoughi, A Hoffmann, R Weiss Solid-State Electronics 46 (5), 615-619, 2002 | 65 | 2002 |
| Elasticity of SrTiO3 perovskite under high pressure in cubic, tetragonal and orthorhombic phases A Hachemi, H Hachemi, A Ferhat-Hamida, L Louail Physica Scripta 82 (2), 025602, 2010 | 59 | 2010 |
| Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes S Toumi, A Ferhat-Hamida, L Boussouar, A Sellai, Z Ouennoughi, ... Microelectronic Engineering 86 (3), 303-309, 2009 | 54 | 2009 |
| Performance improvement of multi access OCDMA system based on a new zero cross correlation code M Alayedi, A Cherifi, AF Hamida, CBM Rashidi, BS Bouazza IOP conference series: materials science and engineering 767 (1), 012042, 2020 | 14 | 2020 |
| Design improvement to reduce noise effect in CDMA multiple access optical systems based on new (2-D) code using spectral/spatial half-matrix technique M Alayedi, A Cherifi, AF Hamida, M Rahmani, Y Attalah, BS Bouazza Journal of Optical Communications 44 (s1), s1265-s1276, 2024 | 13 | 2024 |
| Performance improvement of optical multiple access CDMA network using a new three-dimensional (spectral/time/spatial) code M Alayedi, A Cherifi, AF Hamida, BS Bouazza, SA Aljunid Wireless Personal Communications 118 (4), 2675-2698, 2021 | 13 | 2021 |
| Performance enhancement of SAC-OCDMA system using a new optical code M Alayedi, A Cherifi, AF Hamida 2019 6th international conference on image and signal processing and their …, 2019 | 12 | 2019 |
| Structural, elastic, electronic and optical properties of the newly synthesized selenides Tl2CdXSe4 (X = Ge, Sn) S Karkour, A Bouhemadou, D Allali, K Haddadi, S Bin-Omran, R Khenata, ... The European Physical Journal B 95 (3), 38, 2022 | 9 | 2022 |
| A fair comparison of SAC-OCDMA system configurations based on two dimensional cyclic shift code and spectral direct detection M Alayedi, A Cherifi, A Ferhat Hamida, H Mrabet Telecommunication Systems 79 (2), 193-212, 2022 | 9 | 2022 |
| Performance improvement of SAC-OCDMA network utilizing an identity column shifting matrix (ICSM) code M Alayedi, A Cherifi, AF Hamida, R Matem, SAA El-Mottaleb International Conference on Cybersecurity, Cybercrimes, and Smart Emerging …, 2022 | 7 | 2022 |
| Impact of dimensions of memory periphery FinFETs on bias temperature instability M Boubaaya, BJ O’Sullivan, B Djezzar, J Franco, ED Litta, R Ritzenthaler, ... IEEE Transactions on Device and Materials Reliability 20 (2), 269-277, 2020 | 7 | 2020 |
| Performance enhancement of SAC-OCDMA system using an identity row shifting matrix code M Alayedi, A Cherifi, A Ferhat Hamida, BS Bouazza, CBM Rashidi Proceedings of International Conference on Information Technology and …, 2022 | 5 | 2022 |
| First principles study of the structural, elastic, electronic and optical properties of CaSrTt (Tt= Si, Ge, Sn and Pb) A Saoudi, A Hachemi, A Ferhat-Hamida, Y Medkour, M Reffas, ... Solid state communications 152 (19), 1800-1806, 2012 | 5 | 2012 |
| Improvement of multi access ocdma system performance based on three dimensional-single weight zero cross correlation code M Alayedi, A Cherifi, A Ferhat Hamida, BS Bouazza, SA Aljunid Proceedings of the 2021 3rd International Conference on Computer and …, 2021 | 3 | 2021 |
| Effects of Crossover Operators on Genetic Algorithms for the Extraction of Solar Cell Parameters from Noisy Data I Tebbal, AF Hamida Engineering, Technology & Applied Science Research 13 (3), 10630-10637, 2023 | 2 | 2023 |
| Improvement of SAC-OCDMA system performance based on a novel zero cross correlation code design M Alayedi, A Cherifi, A Ferhat Hamida, R Matem, SA Abd El-Mottaleb Advances in Communication Technology, Computing and Engineering; RGN …, 2021 | 2 | 2021 |
| Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100) S Soltani, PM Gammon, A Pérez-Tomas, AF Hamida, Y Terchi Semiconductor Science and Technology 36 (1), 015020, 2020 | 2 | 2020 |
| Impact of fin height on bias temperature instability of memory periphery FinFETs M Boubaaya, BJ O'Sullivan, J Franco, ED Litta, R Ritzenthaler, E Dupuy, ... 2019 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2019 | 2 | 2019 |
| A. Sellai, R. Weiss, and H. Ryssel AF Hamida, Z Ouennoughi Semicond. Sci. Technol 23, 1, 2008 | 2 | 2008 |
