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Ming-Wei Lin
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Atomic Defects in Monolayer Titanium Carbide (Ti3C2Tx) MXene
X Sang, Y Xie, MW Lin, M Alhabeb, KL Van Aken, Y Gogotsi, PRC Kent, ...
ACS nano 10 (10), 9193-9200, 2016
9132016
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
3952013
Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse
X Li, MW Lin, AA Puretzky, JC Idrobo, C Ma, M Chi, M Yoon, CM Rouleau, ...
Scientific reports 4 (1), 5497, 2014
2992014
Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy
K Wang, B Huang, M Tian, F Ceballos, MW Lin, M Mahjouri-Samani, ...
ACS nano 10 (7), 6612-6622, 2016
2972016
Ultrathin nanosheets of CrSiTe 3: a semiconducting two-dimensional ferromagnetic material
MW Lin, HL Zhuang, J Yan, TZ Ward, AA Puretzky, CM Rouleau, Z Gai, ...
Journal of Materials Chemistry C 4 (2), 315-322, 2016
2842016
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy
X Li, MW Lin, J Lin, B Huang, AA Puretzky, C Ma, K Wang, W Zhou, ...
Science Advances 2 (4), e1501882, 2016
2812016
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
M Mahjouri-Samani, MW Lin, K Wang, AR Lupini, J Lee, L Basile, ...
Nature communications 6 (1), 7749, 2015
2492015
Strong spin-lattice coupling in CrSiTe3
LD Casto, AJ Clune, MO Yokosuk, JL Musfeldt, TJ Williams, HL Zhuang, ...
APL materials 3 (4), 2015
2432015
Method to improve planarity of electroplated copper
SW Chou, MH Tsai, MW Lin
US Patent 7,064,068, 2006
2032006
Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte
MW Lin, L Liu, Q Lan, X Tan, KS Dhindsa, P Zeng, VM Naik, MMC Cheng, ...
Journal of Physics D: Applied Physics 45 (34), 345102, 2012
1862012
Thickness-dependent charge transport in few-layer MoS2 field-effect transistors
MW Lin, II Kravchenko, J Fowlkes, X Li, AA Puretzky, CM Rouleau, ...
Nanotechnology 27 (16), 165203, 2016
1812016
Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2−x Crystals
M Mahjouri-Samani, L Liang, A Oyedele, YS Kim, M Tian, N Cross, ...
Nano letters 16 (8), 5213-5220, 2016
1452016
Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene
X Li, L Basile, B Huang, C Ma, J Lee, IV Vlassiouk, AA Puretzky, MW Lin, ...
ACS nano 9 (8), 8078-8088, 2015
1392015
Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
V Iberi, L Liang, AV Ievlev, MG Stanford, MW Lin, X Li, M Mahjouri-Samani, ...
Scientific reports 6 (1), 30481, 2016
1192016
Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors
MW Lin, C Ling, Y Zhang, HJ Yoon, MMC Cheng, LA Agapito, N Kioussis, ...
Nanotechnology 22 (26), 265201, 2011
1192011
Beaming light from a subwavelength metal slit surrounded by dielectric surface gratings
DZ Lin, CK Chang, YC Chen, DL Yang, MW Lin, JT Yeh, JM Liu, CH Kuan, ...
Optics Express 14 (8), 3503-3511, 2006
1042006
Full electroresistance modulation in a mixed-phase metallic alloy
ZQ Liu, L Li, Z Gai, JD Clarkson, SL Hsu, AT Wong, LS Fan, MW Lin, ...
Physical review letters 116 (9), 097203, 2016
1032016
Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation
X Li, MW Lin, L Basile, SM Hus, AA Puretzky, J Lee, YC Kuo, LY Chang, ...
Advanced Materials 28 (37), 8240-8247, 2016
982016
Edge effects on the pH response of graphene nanoribbon field effect transistors
X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013
642013
Electrically reversible cracks in an intermetallic film controlled by an electric field
ZQ Liu, JH Liu, MD Biegalski, JM Hu, SL Shang, Y Ji, JM Wang, SL Hsu, ...
Nature communications 9 (1), 41, 2018
612018
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