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Tsuyoshi HASEGAWA
Tsuyoshi HASEGAWA
Professor, Dept. Applied Physics, Waseda University
Verified email at waseda.jp
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Cited by
Year
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
T Ohno, T Hasegawa, T Tsuruoka, K Terabe, JK Gimzewski, M Aono
Nature materials 10 (8), 591-595, 2011
16982011
Quantized conductance atomic switch
K Terabe, T Hasegawa, T Nakayama, M Aono
Nature 433 (7021), 47-50, 2005
14732005
Nanometer-scale switches using copper sulfide
T Sakamoto, H Sunamura, H Kawaura, T Hasegawa, T Nakayama, ...
Applied Physics Letters 82 (18), 3032-3034, 2003
6422003
Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems
A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ...
Nature nanotechnology 11 (1), 67-74, 2016
6002016
Atomic switch: Atom/ion movement controlled devices for beyond Von‐Neumann computers
T Hasegawa, K Terabe, T Tsuruoka, M Aono
Advanced Materials 24 (2), 252-267, 2012
4012012
Learning abilities achieved by a single solid‐state atomic switch
T Hasegawa, T Ohno, K Terabe, T Tsuruoka, T Nakayama, JK Gimzewski, ...
Advanced materials 22 (16), 1831-1834, 2010
3562010
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
T Tsuruoka, K Terabe, T Hasegawa, M Aono
Nanotechnology 21 (42), 425205, 2010
3462010
Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches
T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono
Advanced Functional Materials 22 (1), 70-77, 2012
2942012
A nonvolatile programmable solid-electrolyte nanometer switch
S Kaeriyama, T Sakamoto, H Sunamura, M Mizuno, H Kawaura, ...
IEEE Journal of Solid-State Circuits 40 (1), 168-176, 2005
2882005
Electronic transport in resistive switch
T Sakamoto, K Lister, N Banno, T Hasegawa, K Terabe, M Aono
Applied Physics Letters 91 (9), 092110, 2007
2702007
Generic relevance of counter charges for cation-based nanoscale resistive switching memories
S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono
ACS nano 7 (7), 6396-6402, 2013
2522013
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ...
Nature materials 11 (6), 530-535, 2012
2522012
Surface modification of MoS2 using an STM
S Hosoki, S Hosaka, T Hasegawa
Applied surface science 60, 643-647, 1992
2321992
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration
R Yang, K Terabe, G Liu, T Tsuruoka, T Hasegawa, JK Gimzewski, ...
ACS nano 6 (11), 9515-9521, 2012
2272012
Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch
A Nayak, T Ohno, T Tsuruoka, K Terabe, T Hasegawa, JK Gimzewski, ...
Advanced Functional Materials 22 (17), 3606-3613, 2012
1942012
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
T Tsuruoka, T Hasegawa, K Terabe, M Aono
Nanotechnology 23 (43), 435705, 2012
1892012
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
T Tsuruoka, I Valov, S Tappertzhofen, J van den Hurk, T Hasegawa, ...
Advanced functional materials 25 (40), 6374-6381, 2015
1672015
Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction
K Terabe, T Nakayama, T Hasegawa, M Aono
Journal of applied physics 91 (12), 10110-10114, 2002
1612002
Synaptic plasticity and memory functions achieved in a WO3− x-based nanoionics device by using the principle of atomic switch operation
R Yang, K Terabe, Y Yao, T Tsuruoka, T Hasegawa, JK Gimzewski, ...
Nanotechnology 24 (38), 384003, 2013
1542013
A polymer‐electrolyte‐based atomic switch
S Wu, T Tsuruoka, K Terabe, T Hasegawa, JP Hill, K Ariga, M Aono
Advanced Functional Materials 21 (1), 93-99, 2011
1532011
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