| Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET ML Fan, VPH Hu, YN Chen, P Su, CT Chuang IEEE transactions on electron devices 60 (6), 2038-2044, 2013 | 65 | 2013 |
| Analysis of single-trap-induced random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuits ML Fan, VPH Hu, YN Chen, P Su, CT Chuang IEEE Transactions on Electron Devices 59 (8), 2227-2234, 2012 | 62 | 2012 |
| Optimization of negative-capacitance vertical-tunnel FET (NCVT-FET) VPH Hu, HH Lin, YK Lin, C Hu IEEE Transactions on Electron Devices 67 (6), 2593-2599, 2020 | 61 | 2020 |
| Evaluation of stability, performance of ultra-low voltage MOSFET, TFET, and mixed TFET-MOSFET SRAM cell with write-assist circuits YN Chen, ML Fan, VPH Hu, P Su, CT Chuang IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4 (4 …, 2014 | 56 | 2014 |
| Investigation of cell stability and write ability of FinFET subthreshold SRAM using analytical SNM model ML Fan, YS Wu, VPH Hu, P Su, CT Chuang IEEE Transactions on Electron Devices 57 (6), 1375-1381, 2010 | 54 | 2010 |
| Comparison of 4T and 6T FinFET SRAM cells for subthreshold operation considering variability—A model-based approach ML Fan, YS Wu, VPH Hu, CY Hsieh, P Su, CT Chuang Electron Devices, IEEE Transactions on 58 (3), 609-616, 2011 | 51 | 2011 |
| Independently-controlled-gate FinFET Schmitt trigger sub-threshold SRAMs CY Hsieh, ML Fan, VPH Hu, P Su, CT Chuang IEEE Transactions on very large scale integration (VLSI) systems 20 (7 …, 2011 | 48 | 2011 |
| Design and analysis of robust tunneling FET SRAM YN Chen, ML Fan, VPH Hu, P Su, CT Chuang IEEE transactions on electron devices 60 (3), 1092-1098, 2013 | 44 | 2013 |
| FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI, surface orientation and various gate dielectrics VPH Hu, ML Fan, CY Hsieh, P Su, CT Chuang IEEE Transactions on Electron Devices 58 (3), 805-811, 2011 | 40 | 2011 |
| Negative capacitance enables FinFET and FDSOI scaling to 2 nm node VPH Hu, PC Chiu, AB Sachid, C Hu 2017 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2017 | 36 | 2017 |
| Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits ML Fan, SY Yang, VPH Hu, YN Chen, P Su, CT Chuang Microelectronics Reliability 54 (4), 698-711, 2014 | 29 | 2014 |
| Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation VPH Hu, YS Wu, P Su Semiconductor Science and Technology 24 (4), 045017, 2009 | 29 | 2009 |
| Impacts of work function variation and line-edge roughness on TFET and FinFET devices and 32-bit CLA circuits YN Chen, CJ Chen, ML Fan, VPH Hu, P Su, CT Chuang Journal of Low Power Electronics and Applications 5 (2), 101-115, 2015 | 28 | 2015 |
| Comparative leakage analysis of GeOI FinFET and Ge bulk FinFET VPH Hu, ML Fan, P Su, CT Chuang IEEE transactions on electron devices 60 (10), 3596-3600, 2013 | 26 | 2013 |
| Impact of quantum confinement on short-channel effects for ultrathin-body Germanium-on-insulator MOSFETs YS Wu, HY Hsieh, VPH Hu, P Su Electron Device Letters, IEEE 32 (1), 18-20, 2011 | 26 | 2011 |
| Impact of work function variation, line-edge roughness, and ferroelectric properties variation on negative capacitance FETs VPH Hu, PC Chiu, YC Lu IEEE Journal of the Electron Devices Society 7, 295-302, 2019 | 25 | 2019 |
| Analysis of GeOI FinFET 6T SRAM cells with variation-tolerant WLUD read-assist and TVC write-assist VPH Hu, ML Fan, P Su, CT Chuang IEEE Transactions on Electron Devices 62 (6), 1710-1715, 2015 | 25 | 2015 |
| Split-gate FeFET (SG-FeFET) with dynamic memory window modulation for non-volatile memory and neuromorphic applications VPH Hu, HH Lin, ZA Zheng, ZT Lin, YC Lu, LY Ho, YW Lee, CW Su, CJ Su 2019 Symposium on VLSI Technology, T134-T135, 2019 | 24 | 2019 |
| Investigation and simulation of work-function variation for III–V broken-gap heterojunction tunnel FET CW Hsu, ML Fan, VPH Hu, P Su IEEE Journal of the Electron Devices Society 3 (3), 194-199, 2015 | 23 | 2015 |
| Investigation of backgate-biasing effect for ultrathin-body III-V heterojunction tunnel FET ML Fan, VPH Hu, YN Chen, CW Hsu, P Su, CT Chuang IEEE Transactions on Electron Devices 62 (1), 107-113, 2014 | 23 | 2014 |
