Jaebeom Lee
Jaebeom Lee
Research Assistant, Materials Science and Engineering, The University of Texas at Dallas
Verified email at - Homepage
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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 242901, 2017
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 C) Hf0.5Zr0.5O2 films
SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, CD Young, L Colombo, ...
Applied Physics Letters 112 (17), 172902, 2018
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ...
Applied Physics Letters 113 (18), 182903, 2018
Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices
L Cheng, J Lee, H Zhu, AV Ravichandran, Q Wang, AT Lucero, MJ Kim, ...
ACS nano 11 (10), 10243-10252, 2017
Stress-induced crystallization of thin Hf1-XZrXO2 films: The origin of enhanced energy density with minimized energy loss for lead-free electrostatic energy storage applications
SJ Kim, J Mohan, J Lee, HS Kim, J Lee, CD Young, L Colombo, ...
ACS applied materials & interfaces, 2019
Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ...
IEEE Electron Device Letters 39 (8), 1195-1198, 2018
Low Temperature (400 c) Ferroelectric Hf0. 5Zr0. 5O2 Capacitors for Next-Generation FRAM Applications
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ...
Memory Workshop (IMW), 2017 IEEE International, 1-4, 2017
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