| MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap HS Lee, SW Min, YG Chang, MK Park, T Nam, H Kim, JH Kim, S Ryu, S Im Nano letters 12 (7), 3695-3700, 2012 | 1457 | 2012 |
| Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition BJ Jin, S Im, SY Lee Thin solid films 366 (1-2), 107-110, 2000 | 690 | 2000 |
| Improving the gate stability of ZnO thin-film transistors with aluminum oxide dielectric layers MS Oh, K Lee, JH Song, BH Lee, MM Sung, DK Hwang, S Im Journal of the Electrochemical Society 155 (12), H1009, 2008 | 673 | 2008 |
| 42.3: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM‐OLED display SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, ... SID Symposium Digest of Technical Papers 39 (1), 629-632, 2008 | 666 | 2008 |
| Ultraviolet-enhanced photodiode employing structure IS Jeong, JH Kim, S Im Applied physics letters 83 (14), 2946-2948, 2003 | 483 | 2003 |
| Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition BJ Jin, SH Bae, SY Lee, S Im Materials Science and Engineering: B 71 (1-3), 301-305, 2000 | 466 | 2000 |
| Transparent and photo‐stable ZnO thin‐film transistors to drive an active matrix organic‐light‐emitting‐diode display panel SHK Park, CS Hwang, M Ryu, S Yang, C Byun, J Shin, JI Lee, K Lee, ... Advanced Materials 21 (6), 678-682, 2009 | 416 | 2009 |
| MoS2 nanosheets for top-gate nonvolatile memory transistor channel HS Lee, SW Min, MK Park, YT Lee, PJ Jeon, JH Kim, S Ryu, S Im Small 8 (20), 3111-3115, 2012 | 252 | 2012 |
| Optimizing n-ZnO/p-Si heterojunctions for photodiode applications JY Lee, YS Choi, JH Kim, MO Park, S Im Thin solid films 403, 553-557, 2002 | 251 | 2002 |
| Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction A Pezeshki, SHH Shokouh, T Nazari, K Oh, S Im Advanced Materials 28 (16), 3216-3222, 2016 | 244 | 2016 |
| Photodetecting properties of ZnO-based thin-film transistors HS Bae, MH Yoon, JH Kim, S Im Applied Physics Letters 83 (25), 5313-5315, 2003 | 228 | 2003 |
| Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics DK Hwang, MS Oh, JM Hwang, JH Kim, S Im Applied Physics Letters 92 (1), 2008 | 163 | 2008 |
| Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors DK Hwang, K Lee, JH Kim, S Im, JH Park, E Kim Applied physics letters 89 (9), 2006 | 162 | 2006 |
| Black phosphorus–zinc oxide nanomaterial heterojunction for p–n diode and junction field-effect transistor PJ Jeon, YT Lee, JY Lim, JS Kim, DK Hwang, S Im Nano letters 16 (2), 1293-1298, 2016 | 153 | 2016 |
| Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition BJ Jin, HS Woo, S Im, SH Bae, SY Lee Applied Surface Science 169, 521-524, 2001 | 141 | 2001 |
| Optimum channel thickness in pentacene-based thin-film transistors J Lee, K Kim, JH Kim, S Im, DY Jung Applied physics letters 82 (23), 4169-4171, 2003 | 139 | 2003 |
| Ultraviolet enhanced Si-photodetector using p-NiO films JM Choi, S Im Applied Surface Science 244 (1-4), 435-438, 2005 | 137 | 2005 |
| Optical and luminescence characteristics of thermally evaporated pentacene films on Si SP Park, SS Kim, JH Kim, CN Whang, S Im Applied physics letters 80 (16), 2872-2874, 2002 | 137 | 2002 |
| Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain DK Hwang, YT Lee, HS Lee, YJ Lee, SH Shokouh, J Kyhm, J Lee, HH Kim, ... NPG Asia Materials 8 (1), e233-e233, 2016 | 136 | 2016 |
| Correlation between photoelectric and optical absorption spectra of thermally evaporated pentacene films J Lee, SS Kim, K Kim, JH Kim, S Im Applied Physics Letters 84 (10), 1701-1703, 2004 | 135 | 2004 |
Do Kyung HwangPrincipal Research Scientist, Korea Institute of Science and Technology (KIST)Verified email at kist.re.kr
