| Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry FJ Nelson, VK Kamineni, T Zhang, ES Comfort, JU Lee, AC Diebold Applied Physics Letters 97 (25), 2010 | 231 | 2010 |
| SILICIDE PROTECTION DURING CONTACT METALLIZATION AND RESULTING SEMICONDUCTOR STRUCTURES VK Kamineni, R Xie, R Miller US Patent 20,150,187,896, 2015 | 197 | 2015 |
| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 175 | 2016 |
| Future on-chip interconnect metallization and electromigration CK Hu, J Kelly, H Huang, K Motoyama, H Shobha, Y Ostrovski, JHC Chen, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 4F. 1-1-4F. 1-6, 2018 | 65 | 2018 |
| Layer-by-layer nanoassembly of polyelectrolytes using formamide as the working medium VK Kamineni, YM Lvov, TA Dobbins Langmuir 23 (14), 7423-7427, 2007 | 58 | 2007 |
| Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 57 | 2016 |
| Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
| INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED CONTACT STRUCTURES X Zhang, X Lin, V Kamineni US Patent 20,140,327,140, 2014 | 48* | 2014 |
| Semiconductor devices and methods of fabrication with reduced gate and contact resistances R Xie, X Cai, V Kamineni, K Cheng, A Khakifirooz US Patent 9,029,920, 2015 | 46 | 2015 |
| Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires CK Hu, J Kelly, JHC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 44 | 2017 |
| Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process VK Kamineni, M Raymond, EJ Bersch, BB Doris, AC Diebold Journal of Applied Physics 107 (9), 2010 | 44 | 2010 |
| Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nm H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018 | 40 | 2018 |
| Thickness Measurement of Thin‐metal Films by Optical Metrology VK Kamineni, M Raymond, EJ Bersch, BB Doris, AC Diebold AIP Conference Proceedings 1173, 114, 2009 | 39 | 2009 |
| Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices R Xie, VK Kamineni, AF Bello, NV LiCausi, W Wang, M Wedlake, ... US Patent 9,093,302, 2015 | 38 | 2015 |
| Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon HS Kamineni, VK Kamineni, RL Moore, S Gallis, AC Diebold, M Huang, ... Journal of Applied Physics 111 (1), 2012 | 38 | 2012 |
| Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs A Paul, A Bryant, TB Hook, CC Yeh, V Kamineni, JB Johnson, N Tripathi, ... 2013 IEEE International Electron Devices Meeting, 2013 | 36 | 2013 |
| FinFET channel stress using tungsten contacts in raised epitaxial source and drain A Paul, A Bello, VK Kamineni, D Deniz US Patent 8,975,142, 2015 | 35 | 2015 |
| Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study NA Lanzillo, H Dixit, E Milosevic, C Niu, AV Carr, P Oldiges, MV Raymond, ... Journal of Applied Physics 123 (15), 2018 | 34 | 2018 |
| Ti and NiPt/Ti liner silicide contacts for advanced technologies P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 30 | 2016 |
| Methods of forming conductive contacts for a semiconductor device V Kamineni, R Xie US Patent App. 13/473,284, 2012 | 25 | 2012 |
