Malcolm Carroll
Title
Cited by
Cited by
Year
Electron spin decoherence in isotope-enriched silicon
WM Witzel, MS Carroll, A Morello, Ł Cywiński, SD Sarma
Physical review letters 105 (18), 187602, 2010
1582010
Semiconductor devices with reduced active region defects and unique contacting schemes
JD Bude, M Carroll, CA King
US Patent 7,012,314, 2006
1582006
Semiconductor devices with reduced active region defects and unique contacting schemes
JD Bude, M Carroll, CA King
US Patent 7,297,569, 2007
1012007
Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
EP Nordberg, GA Ten Eyck, HL Stalford, RP Muller, RW Young, K Eng, ...
Physical Review B 80 (11), 115331, 2009
912009
Coherent coupling between a quantum dot and a donor in silicon
P Harvey-Collard, NT Jacobson, M Rudolph, J Dominguez, GA Ten Eyck, ...
Nature communications 8 (1), 1-6, 2017
86*2017
Quantum decoherence of the central spin in a sparse system of dipolar coupled spins
WM Witzel, MS Carroll, Ł Cywiński, SD Sarma
Physical Review B 86 (3), 035452, 2012
862012
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
P Harvey-Collard, B D’Anjou, M Rudolph, NT Jacobson, J Dominguez, ...
Physical Review X 8 (2), 021046, 2018
712018
A silicon metal-oxide-semiconductor electron spin-orbit qubit
RM Jock, NT Jacobson, P Harvey-Collard, AM Mounce, V Srinivasa, ...
Nature communications 9 (1), 1-8, 2018
702018
Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET
LA Tracy, EH Hwang, K Eng, GA Ten Eyck, EP Nordberg, K Childs, ...
Physical Review B 79 (23), 235307, 2009
682009
25-nm p-channel vertical MOSFETs with SiGeC source-drains
M Yang, CL Chang, M Carroll, JC Sturm
IEEE Electron Device Letters 20 (6), 301-303, 1999
621999
Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities
MS Carroll, R Koudelka
Semiconductor science and technology 22 (1), S164, 2006
582006
Implications of simultaneous requirements for low-noise exchange gates in double quantum dots
E Nielsen, RW Young, RP Muller, MS Carroll
Physical Review B 82 (7), 075319, 2010
482010
Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
LA Tracy, DR Luhman, SM Carr, NC Bishop, GA Ten Eyck, T Pluym, ...
Applied Physics Letters 108 (6), 063101, 2016
472016
Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation
MS Carroll, CL Chang, JC Sturm, T Büyüklimanli
Applied physics letters 73 (25), 3695-3697, 1998
461998
Valley splitting of single-electron Si MOS quantum dots
JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ...
Applied Physics Letters 109 (25), 253101, 2016
452016
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
EP Nordberg, HL Stalford, R Young, GA Ten Eyck, K Eng, LA Tracy, ...
Applied Physics Letters 95 (20), 202102, 2009
452009
Modeling of boron and phosphorus implantation into (100) germanium
YS Suh, MS Carroll, RA Levy, MA Sahiner, G Bisognin, CA King
IEEE transactions on electron devices 52 (1), 91-98, 2004
442004
Low‐Temperature Preparation of Oxygen‐and Carbon‐Free Silicon and Silicon‐Germanium Surfaces for Silicon and Silicon‐Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor …
MS Carroll, JC Sturm, M Yang
Journal of The Electrochemical Society 147 (12), 4652, 2000
442000
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
MJ Curry, TD England, NC Bishop, G Ten-Eyck, JR Wendt, T Pluym, ...
Applied Physics Letters 106 (20), 203505, 2015
432015
Implantation and activation of high concentrations of boron in germanium
YS Suh, MS Carroll, RA Levy, G Bisognin, D De Salvador, MA Sahiner, ...
IEEE transactions on electron devices 52 (11), 2416-2421, 2005
402005
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Articles 1–20