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Harrison Sejoon Kim
Harrison Sejoon Kim
Intel Santa Clara
Verified email at intel.com
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Year
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
2352017
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim
Materials 9 (12), 1007, 2016
1202016
Extremely high barrier performance of organic–inorganic nanolaminated thin films for organic light-emitting diodes
KH Yoon, HS Kim, KS Han, SH Kim, YEK Lee, NK Shrestha, SY Song, ...
Acs Applied Materials & Interfaces 9 (6), 5399-5408, 2017
692017
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0. 5Zr0. 5O2 capacitors
SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ...
Applied Physics Letters 113 (18), 2018
562018
Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells
S Yoon, SJ Kim, HS Kim, JS Park, IK Han, JW Jung, M Park
Nanoscale 9 (42), 16305-16312, 2017
342017
Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic…
SJ Kim, J Mohan, JS Lee, HS Kim, J Lee, CD Young, L Colombo, ...
ACS applied materials & interfaces 11 (5), 5208-5214, 2019
302019
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ...
Materials 13 (13), 2968, 2020
292020
Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper
HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ...
ACS applied materials & interfaces 10 (51), 44825-44833, 2018
292018
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors
SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ...
Applied Physics Letters 115 (18), 2019
282019
Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane
X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ...
ACS applied materials & interfaces 10 (16), 14116-14123, 2018
282018
Low‐thermal‐budget fluorite‐structure ferroelectrics for future electronic device applications
HJ Kim, Y An, YC Jung, J Mohan, JG Yoo, YI Kim, H Hernandez-Arriaga, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100028, 2021
242021
Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
KS Park, S Kim, H Kim, D Kwon, YEK Lee, SW Min, S Im, HJ Choi, S Lim, ...
Nanoscale 7 (42), 17702-17709, 2015
232015
Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
Applied Physics Letters 117 (23), 2020
162020
Low-thermal-budget (300 C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing
SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ...
Applied Physics Letters 119 (24), 2021
152021
Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source
YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ...
Materials 13 (15), 3387, 2020
152020
Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks
J Zheng, B Lienhard, G Doerk, M Cotlet, E Bersin, HS Kim, YC Byun, ...
Scientific reports 9 (1), 6914, 2019
132019
Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
ECS Transactions 98 (3), 63, 2020
112020
High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor
HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ...
Journal of Materials Chemistry C 8 (37), 13033-13039, 2020
102020
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis
T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ...
APL Materials 9 (3), 2021
92021
Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings
SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ...
ACS Applied Nano Materials 4 (3), 2558-2564, 2021
92021
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