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Ashish Baraskar
Ashish Baraskar
Sandisk, GLOBAL FOUNDRIES, UCSB
Verified email at ece.ucsb.edu
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Cited by
Year
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
1162009
Memory hole size variation in a 3D stacked memory
L Pang, A Baraskar, Y Zhang, Y Dong
US Patent 9,812,462, 2017
872017
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
742009
Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data
A Baraskar, AC Gossard, MJW Rodwell
Journal of Applied Physics 114 (15), 2013
652013
InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology
U Singisetti, MA Wistey, GJ Burek, E Arkun, AK Baraskar, Y Sun, ...
physica status solidi c 6 (6), 1394-1398, 2009
552009
Ultra low contact resistivities for CMOS beyond 10-nm node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ...
IEEE electron device letters 34 (6), 723-725, 2013
512013
Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition
CN Chinnasamy, SD Yoon, A Yang, A Baraskar, C Vittoria, VG Harris
Journal of applied physics 101 (9), 2007
512007
Full band calculations of the intrinsic lower limit of contact resistivity
J Maassen, C Jeong, A Baraskar, M Rodwell, M Lundstrom
Applied Physics Letters 102 (11), 2013
502013
Ex situ Ohmic contacts to n-InGaAs
A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ...
Journal of Vacuum Science & Technology B 28 (4), C5I7-C5I9, 2010
412010
First demonstration of high-Ge-content strained-Si1−xGex(x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and …
P Hashemi, K Balakrishnan, SU Engelmann, JA Ott, A Khakifirooz, ...
2014 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2014
362014
1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
V Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ...
69th Device Research Conference, 271-272, 2011
352011
High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
P Hashemi, M Kobayashi, A Majumdar, LA Yang, A Baraskar, ...
2013 Symposium on VLSI Circuits, T18-T19, 2013
342013
Functionalization of FeCo alloy nanoparticles with highly dielectric amorphous oxide coatings
Q Nguyen, CN Chinnasamy, SD Yoon, S Sivasubramanian, T Sakai, ...
Journal of Applied Physics 103 (7), 2008
342008
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous
V Jain, E Lobisser, A Baraskar, BJ Thibeault, MJW Rodwell, Z Griffith, ...
IEEE Electron Device Letters 32 (1), 24-26, 2010
292010
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for …
P Hashemi, K Balakrishnan, A Majumdar, A Khakifirooz, W Kim, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
282014
Multi-pass programming process for memory device which omits verify test in first program pass
A Baraskar, CH Lu, V Diep, Y Dong
US Patent 10,811,109, 2020
222020
High doping effects on in-situ Ohmic contacts to n-InAs
A Baraskar, V Jain, MA Wistey, U Singisetti, YJ Lee, B Thibeault, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
222010
Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof
A Baraskar, N Hosoda, Y Zhang, RS Makala, H Tanaka, R Nakamura, ...
US Patent 10,115,730, 2018
212018
Dual Silicide Process
AK Baraskar, C Cabral, SO Koswatta, C Lavoie, AS Ozcan, L Yang, ...
US Patent App. 13/755,427, 2014
182014
III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
172010
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