| Single-shot readout of an electron spin in silicon A Morello, JJ Pla, FA Zwanenburg, KW Chan, KY Tan, H Huebl, ... Nature 467 (7316), 687-691, 2010 | 911 | 2010 |
| Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon A Morello, CC Escott, H Huebl, LHW van Beveren, LCL Hollenberg, ... Physical Review B 80 (8), 081307, 2009 | 116 | 2009 |
| Resonant tunnelling features in quantum dots CC Escott, FA Zwanenburg, A Morello Nanotechnology 21 (27), 274018, 2010 | 87 | 2010 |
| Charge state control and relaxation in an atomically doped silicon device SES Andresen, R Brenner, CJ Wellard, C Yang, T Hopf, CC Escott, ... Nano letters 7 (7), 2000-2003, 2007 | 82 | 2007 |
| Probe and control of the reservoir density of states in single-electron devices M Möttönen, KY Tan, KW Chan, FA Zwanenburg, WH Lim, CC Escott, ... Physical Review B 81 (16), 161304, 2010 | 40 | 2010 |
| Control and readout of electron or hole spin A Morello, A Dzurak, HG Huebl, RG Clark, LHW Van Beveren, ... US Patent 8,507,894, 2013 | 37 | 2013 |
| Materials for silicon quantum dots and their impact on electron spin qubits A Saraiva, WH Lim, CH Yang, CC Escott, A Laucht, AS Dzurak Advanced Functional Materials 32 (3), 2105488, 2022 | 30 | 2022 |
| Electron tunnel rates in a donor-silicon single electron transistor hybrid H Huebl, CD Nugroho, A Morello, CC Escott, MA Eriksson, C Yang, ... Physical Review B 81 (23), 235318, 2010 | 27 | 2010 |
| Single-electron operation of a silicon-CMOS 2× 2 quantum dot array with integrated charge sensing W Gilbert, A Saraiva, WH Lim, CH Yang, A Laucht, B Bertrand, N Rambal, ... Nano Letters 20 (11), 7882-7888, 2020 | 26 | 2020 |
| On-demand electrical control of spin qubits W Gilbert, T Tanttu, WH Lim, MK Feng, JY Huang, JD Cifuentes, ... Nature Nanotechnology, 1-6, 2023 | 16 | 2023 |
| Modelling single electron transfer in Si: P double quantum dots KH Lee, AD Greentree, JP Dinale, CC Escott, AS Dzurak, RG Clark Nanotechnology 16 (1), 74, 2004 | 14 | 2004 |
| A high-sensitivity charge sensor for silicon qubits above 1 K JY Huang, WH Lim, RCC Leon, CH Yang, FE Hudson, CC Escott, ... Nano Letters 21 (14), 6328-6335, 2021 | 11 | 2021 |
| Gate-controlled charge transfer in Si: P double quantum dots FE Hudson, AJ Ferguson, CC Escott, C Yang, DN Jamieson, RG Clark, ... Nanotechnology 19 (19), 195402, 2008 | 7 | 2008 |
| Stability of high-fidelity two-qubit operations in silicon T Tanttu, WH Lim, JY Huang, ND Stuyck, W Gilbert, RY Su, MK Feng, ... arXiv preprint arXiv:2303.04090, 2023 | 5 | 2023 |
| Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry Z Wang, MK Feng, S Serrano, W Gilbert, RCC Leon, T Tanttu, P Mai, ... arXiv preprint arXiv:2208.04724, 2022 | 3 | 2022 |
| Modelling of phosphorus-donor based silicon qubit and nanoelectronic devices CC Escott PhD thesis, University of New South Wales, Sydney, Australia, 2008 | 3 | 2008 |
| Scaling of ion implanted Si: P single electron devices CC Escott, FE Hudson, VC Chan, KD Petersson, RG Clark, AS Dzurak Nanotechnology 18 (23), 235401, 2007 | 2 | 2007 |
| Bounds to electron spin qubit variability for scalable CMOS architectures JD Cifuentes, T Tanttu, W Gilbert, JY Huang, E Vahapoglu, RCC Leon, ... arXiv preprint arXiv:2303.14864, 2023 | 1 | 2023 |
| Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform IK Jin, K Kumar, MJ Rendell, JY Huang, CC Escott, FE Hudson, WH Lim, ... Nano Letters 23 (4), 1261-1266, 2023 | 1 | 2023 |
| Fidelity assessment and tomography of symmetrically pulsed 2Q gates in MOS quantum dots. T Tanttu, WH Lim, J Huang, N Dumoulin Stuyck, W Gilbert, MK Feng, ... Bulletin of the American Physical Society, 2023 | | 2023 |
