Chris Escott
Cited by
Cited by
Single-shot readout of an electron spin in silicon
A Morello, JJ Pla, FA Zwanenburg, KW Chan, KY Tan, H Huebl, ...
Nature 467 (7316), 687-691, 2010
Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
A Morello, CC Escott, H Huebl, LHW van Beveren, LCL Hollenberg, ...
Physical Review B 80 (8), 081307, 2009
Resonant tunnelling features in quantum dots
CC Escott, FA Zwanenburg, A Morello
Nanotechnology 21 (27), 274018, 2010
Charge state control and relaxation in an atomically doped silicon device
SES Andresen, R Brenner, CJ Wellard, C Yang, T Hopf, CC Escott, ...
Nano letters 7 (7), 2000-2003, 2007
Probe and control of the reservoir density of states in single-electron devices
M Möttönen, KY Tan, KW Chan, FA Zwanenburg, WH Lim, CC Escott, ...
Physical Review B 81 (16), 161304, 2010
Control and readout of electron or hole spin
A Morello, A Dzurak, HG Huebl, RG Clark, LHW Van Beveren, ...
US Patent 8,507,894, 2013
Materials for silicon quantum dots and their impact on electron spin qubits
A Saraiva, WH Lim, CH Yang, CC Escott, A Laucht, AS Dzurak
Advanced Functional Materials 32 (3), 2105488, 2022
Electron tunnel rates in a donor-silicon single electron transistor hybrid
H Huebl, CD Nugroho, A Morello, CC Escott, MA Eriksson, C Yang, ...
Physical Review B 81 (23), 235318, 2010
Single-electron operation of a silicon-CMOS 2× 2 quantum dot array with integrated charge sensing
W Gilbert, A Saraiva, WH Lim, CH Yang, A Laucht, B Bertrand, N Rambal, ...
Nano Letters 20 (11), 7882-7888, 2020
On-demand electrical control of spin qubits
W Gilbert, T Tanttu, WH Lim, MK Feng, JY Huang, JD Cifuentes, ...
Nature Nanotechnology, 1-6, 2023
Modelling single electron transfer in Si: P double quantum dots
KH Lee, AD Greentree, JP Dinale, CC Escott, AS Dzurak, RG Clark
Nanotechnology 16 (1), 74, 2004
A high-sensitivity charge sensor for silicon qubits above 1 K
JY Huang, WH Lim, RCC Leon, CH Yang, FE Hudson, CC Escott, ...
Nano Letters 21 (14), 6328-6335, 2021
Gate-controlled charge transfer in Si: P double quantum dots
FE Hudson, AJ Ferguson, CC Escott, C Yang, DN Jamieson, RG Clark, ...
Nanotechnology 19 (19), 195402, 2008
Stability of high-fidelity two-qubit operations in silicon
T Tanttu, WH Lim, JY Huang, ND Stuyck, W Gilbert, RY Su, MK Feng, ...
arXiv preprint arXiv:2303.04090, 2023
Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry
Z Wang, MK Feng, S Serrano, W Gilbert, RCC Leon, T Tanttu, P Mai, ...
arXiv preprint arXiv:2208.04724, 2022
Modelling of phosphorus-donor based silicon qubit and nanoelectronic devices
CC Escott
PhD thesis, University of New South Wales, Sydney, Australia, 2008
Scaling of ion implanted Si: P single electron devices
CC Escott, FE Hudson, VC Chan, KD Petersson, RG Clark, AS Dzurak
Nanotechnology 18 (23), 235401, 2007
Bounds to electron spin qubit variability for scalable CMOS architectures
JD Cifuentes, T Tanttu, W Gilbert, JY Huang, E Vahapoglu, RCC Leon, ...
arXiv preprint arXiv:2303.14864, 2023
Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
IK Jin, K Kumar, MJ Rendell, JY Huang, CC Escott, FE Hudson, WH Lim, ...
Nano Letters 23 (4), 1261-1266, 2023
Fidelity assessment and tomography of symmetrically pulsed 2Q gates in MOS quantum dots.
T Tanttu, WH Lim, J Huang, N Dumoulin Stuyck, W Gilbert, MK Feng, ...
Bulletin of the American Physical Society, 2023
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