| Re‐examination of pressure and speed dependences of removal rate during chemical‐mechanical polishing processes WT Tseng, YL Wang Journal of the Electrochemical Society 144 (2), L15, 1997 | 235 | 1997 |
| Modeling of the wear mechanism during chemical‐mechanical polishing CW Liu, BT Dai, WT Tseng, CF Yeh Journal of the Electrochemical Society 143 (2), 716, 1996 | 171 | 1996 |
| Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps CK Hu, L Gignac, E Liniger, B Herbst, DL Rath, ST Chen, S Kaldor, ... Applied Physics Letters 83 (5), 869-871, 2003 | 157 | 2003 |
| Copper recess process with application to selective capping and electroless plating ST Chen, TJ Dalton, KM Davis, CK Hu, FF Jamin, SK Kaldor, M Krishnan, ... US Patent 6,975,032, 2005 | 154 | 2005 |
| Selective capping of copper wiring PC Andricacos, ST Chen, JM Cotte, H Deligianni, M Krishnan, WT Tseng, ... US Patent 7,008,871, 2006 | 104 | 2006 |
| A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing WT Tseng, JH Chin, LC Kang Journal of the Electrochemical Society 146 (5), 1952, 1999 | 95 | 1999 |
| Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing MT Wang, MS Tsai, C Liu, WT Tseng, TC Chang, LJ Chen, MC Chen Thin Solid Films 308, 518-522, 1997 | 81 | 1997 |
| Effects of overlayers on electromigration reliability improvement for cu/low k interconnects CK Hu, D Canaperi, ST Chen, LM Gignac, B Herbst, S Kaldor, M Krishnan, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 222-228, 2004 | 73 | 2004 |
| Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide CF Lin, WT Tseng, MS Feng Journal of Applied Physics 87 (6), 2808-2815, 2000 | 71 | 2000 |
| Chemical mechanical polishing slurry for metallic thin film MS Tsai, WT Tseng US Patent 5,922,091, 1999 | 58 | 1999 |
| Post cleaning for FEOL CMP with silica and ceria slurries WT Tseng, C Wu, T McCormack, JC Yang ECS Journal of Solid State Science and Technology 6 (10), P718, 2017 | 52 | 2017 |
| Effects of film stress on the chemical mechanical polishing process WT Tseng, YH Wang, JH Chin Journal of the Electrochemical Society 146 (11), 4273, 1999 | 52 | 1999 |
| BEOL Cu CMP process evaluation for advanced technology nodes K Tanwar, D Canaperi, M Lofaro, W Tseng, R Patlolla, C Penny, ... Journal of The Electrochemical Society 160 (12), D3247, 2013 | 51 | 2013 |
| Electroless Deposition of Cu Thin Films with CuCl2 HNO 3 Based Chemistry: I. Chemical Formulation and Reaction Mechanisms WT Tseng, CH Lo, SC Lee Journal of the Electrochemical Society 148 (5), C327, 2001 | 49 | 2001 |
| Electromigration Cu mass flow in Cu interconnections CK Hu, D Canaperi, ST Chen, LM Gignac, S Kaldor, M Krishnan, ... Thin Solid Films 504 (1-2), 274-278, 2006 | 45 | 2006 |
| The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection YL Wang, C Liu, MS Feng, WT Tseng Materials Chemistry and Physics 52 (1), 17-22, 1998 | 40 | 1998 |
| Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films WT Tseng, CW Liu, BT Dai, CF Yeh Thin Solid Films 290, 458-463, 1996 | 36 | 1996 |
| Chemical‐Mechanical Polishing and Material Characteristics of Plasma‐Enhanced Chemically Vapor Deposited Fluorinated Oxide Thin Films WT Tseng, YT Hsieh, CF Lin, MS Tsai, MS Feng Journal of the Electrochemical Society 144 (3), 1100, 1997 | 35 | 1997 |
| Microstructure-related resistivity change after chemical–mechanical polish of Al and W thin films WT Tseng, YL Wang, J Niu Thin Solid Films 370 (1-2), 96-100, 2000 | 33 | 2000 |
| Maintaining uniform CMP hard mask thickness STT Chen, KA Kumar, SE Greco, S Ponoth, TA Spooner, DL Rath, ... US Patent 7,253,098, 2007 | 32 | 2007 |
