| Gallium nitride as an electromechanical material M Rais-Zadeh, VJ Gokhale, A Ansari, M Faucher, D Théron, Y Cordier, ... Journal of Microelectromechanical Systems 23 (6), 1252-1271, 2014 | 220 | 2014 |
| Current instabilities in GaN-based devices I Daumiller, D Theron, C Gaquière, A Vescan, R Dietrich, A Wieszt, ... IEEE Electron Device Letters 22 (2), 62-64, 2001 | 193 | 2001 |
| Room-temperature terahertz emission from nanometer field-effect transistors N Dyakonova, A El Fatimy, J Lusakowskil, W Knap, MI Dyakonov, ... 2006 Joint 31st International Conference on Infrared Millimeter Waves and …, 2006 | 189 | 2006 |
| AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ... Journal of Applied Physics 107 (2), 2010 | 187 | 2010 |
| Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ... Electronics Letters 42 (23), 1342-1344, 2006 | 135 | 2006 |
| InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ... IEEE Electron Device Letters 19 (9), 345-347, 1998 | 114 | 1998 |
| A 17 GHz molecular rectifier J Trasobares, D Vuillaume, D Theron, N Clement Nature communications 7 (1), 12850, 2016 | 102 | 2016 |
| Trap effects studies in GaN MESFETs by pulsed measurements S Trassaert, B Boudart, C Gaquiere, D Theron Electron. Lett 35, 1386, 1999 | 96 | 1999 |
| Surface potential of n-and p-type GaN measured by Kelvin force microscopy S Barbet, R Aubry, MA di Forte-Poisson, JC Jacquet, D Deresmes, T Mélin, ... Applied Physics Letters 93 (21), 2008 | 88 | 2008 |
| An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements T Dargent, K Haddadi, T Lasri, N Clément, D Ducatteau, B Legrand, ... Review of Scientific Instruments 84 (12), 2013 | 74 | 2013 |
| Cross-talk artefacts in Kelvin probe force microscopy imaging: a comprehensive study S Barbet, M Popoff, H Diesinger, D Deresmes, D Theron, T Melin Journal of Applied Physics 115 (14), 2014 | 60 | 2014 |
| AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ... IEEE Electron Device Letters 25 (7), 453-455, 2004 | 59 | 2004 |
| 12 GHz GaN/AlN/AlGaN Nanowire MISFET S Vandenbrouck, K Madjour, D Théron, Y Dong, Y Li, CM Lieber, ... IEEE Electron Device Letters 30 (4), 322-324, 2009 | 58 | 2009 |
| The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ... Solid-State Electronics 44 (6), 1021-1027, 2000 | 58 | 2000 |
| Measurement techniques for RF nanoelectronic devices: new equipment to overcome the problems of impedance and scale mismatch H Happy, K Haddadi, D Theron, T Lasri, G Dambrine IEEE Microwave Magazine 15 (1), 30-39, 2014 | 55 | 2014 |
| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ... Applied Physics Letters 94 (23), 2009 | 53 | 2009 |
| Field effect transistors for terahertz detection and emission W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ... Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011 | 52 | 2011 |
| Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN B Boudart, S Trassaert, X Wallart, JC Pesant, O Yaradou, D Théron, ... Journal of electronic materials 29, 603-606, 2000 | 51 | 2000 |
| Estimation of π–π electronic couplings from current measurements J Trasobares, J Rech, T Jonckheere, T Martin, O Alévêque, E Levillain, ... Nano letters 17 (5), 3215-3224, 2017 | 47 | 2017 |
| Note: Quantitative (artifact-free) surface potential measurements using Kelvin force microscopy T Mélin, S Barbet, H Diesinger, D Theron, D Deresmes Review of scientific instruments 82 (3), 2011 | 34 | 2011 |
Christophe Gaquiereprofesseur université Lille 1Verified email at iemn.univ-lille1.fr
