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Jin He
Jin He
Verified email at pku.edu.cn
Title
Cited by
Cited by
Year
A junctionless nanowire transistor with a dual-material gate
H Lou, L Zhang, Y Zhu, X Lin, S Yang, J He, M Chan
IEEE Transactions on Electron Devices 59 (7), 1829-1836, 2012
1722012
BSIM4. 3.0 MOSFET Model User; s Manual
X Xi, M Dunga, J He, W Liu, KM Cao, X Jin, JJ Ou, M Chan, AM Niknejad, ...
University of California, Berkeley 1 (1.01), 1.02, 2003
1512003
Bsim4. 6.0 mosfet model
MV Dunga, X Xi, J He, W Liu, KM Cao, X Jin, JJ Ou, M Chan, AM Niknejad, ...
University of California, Berkeley, 2006
1242006
Vertically stacked silicon nanowire transistors fabricated by inductive plasma etching and stress-limited oxidation
RMY Ng, T Wang, F Liu, X Zuo, J He, M Chan
IEEE electron device letters 30 (5), 520-522, 2009
1212009
Real-time multilead convolutional neural network for myocardial infarction detection
W Liu, M Zhang, Y Zhang, Y Liao, Q Huang, S Chang, H Wang, J He
IEEE journal of biomedical and health informatics 22 (5), 1434-1444, 2017
1102017
An analytical charge model for double-gate tunnel FETs
L Zhang, X Lin, J He, M Chan
IEEE Transactions on Electron Devices 59 (12), 3217-3223, 2012
1052012
Multiple-feature-branch convolutional neural network for myocardial infarction diagnosis using electrocardiogram
W Liu, Q Huang, S Chang, H Wang, J He
Biomedical Signal Processing and Control 45, 22-32, 2018
982018
Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes
M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ...
IEEE electron device letters 32 (7), 955-957, 2011
982011
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan
IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008
922008
A novel barrier controlled tunnel FET
H Wang, S Chang, Y Hu, H He, J He, Q Huang, F He, G Wang
IEEE electron device letters 35 (7), 798-800, 2014
702014
A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors
L Zhang, J He, M Chan
2012 International Electron Devices Meeting, 6.8. 1-6.8. 4, 2012
682012
MFB-CBRNN: A hybrid network for MI detection using 12-lead ECGs
W Liu, F Wang, Q Huang, S Chang, H Wang, J He
IEEE journal of biomedical and health informatics 24 (2), 503-514, 2019
612019
Analysis and design of 60-GHz SPDT switch in 130-nm CMOS
J He, YZ Xiong, YP Zhang
IEEE Transactions on Microwave Theory and Techniques 60 (10), 3113-3119, 2012
592012
A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region
J He, M Chan, X Zhang, Y Wang
IEEE transactions on electron devices 53 (9), 2008-2016, 2006
592006
A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs
J He, X Zhang, G Zhang, M Chan, Y Wang
Solid-State Electronics 50 (3), 416-421, 2006
582006
BSIM4. 6.4 MOSFET Model—User’s Manual
TH Morshed, W Yang, M Dunga, X Xi, J He, W Liu, M Kanyu, X Jin, J Ou, ...
University of California: Berkeley, CA, USA, 10-19, 2009
572009
A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach
J He, X Xuemei, M Chan, CH Lin, A Niknejad, C Hu
International Symposium on Signals, Circuits and Systems. Proceedings, SCS …, 2004
56*2004
A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes
F Liu, J He, J Zhang, Y Chen, M Chan
IEEE transactions on electron devices 55 (12), 3494-3502, 2008
452008
Generic carrier-based core model for undoped four-terminal double-gate MOSFETs valid for symmetric, asymmetric, and independent-gate-operation modes
F Liu, J He, Y Fu, J Hu, W Bian, Y Song, X Zhang, M Chan
IEEE transactions on electron devices 55 (3), 816-826, 2008
452008
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
L Zhang, C Ma, J He, X Lin, M Chan
Solid-state electronics 54 (8), 806-808, 2010
432010
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