| Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current N Youngblood, C Chen, SJ Koester, M Li Nature photonics 9 (4), 247-252, 2015 | 975 | 2015 |
| Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020 | 886 | 2020 |
| Interconnects in the third dimension: Design challenges for 3D ICs K Bernstein, P Andry, J Cann, P Emma, D Greenberg, W Haensch, ... Proceedings of the 44th annual Design Automation Conference, 562-567, 2007 | 434 | 2007 |
| Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching VO Özçelik, JG Azadani, C Yang, SJ Koester, T Low Physical Review B 94 (3), 035125, 2016 | 433 | 2016 |
| Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ... VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on, 98-99, 2002 | 371 | 2002 |
| Strained Si NMOSFETs for high performance CMOS technology K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ... VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on, 59-60, 2001 | 348 | 2001 |
| Efficient electrical control of thin-film black phosphorus bandgap B Deng, V Tran, Y Xie, H Jiang, C Li, Q Guo, X Wang, H Tian, SJ Koester, ... Nature communications 8 (1), 14474, 2017 | 335 | 2017 |
| Method of making 3D integrated circuits MG Farooq, SS Iyer, SJ Koester, H Zhu US Patent 8,158,515, 2012 | 316 | 2012 |
| Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs K Rim, K Chan, L Shi, D Boyd, J Ott, N Klymko, F Cardone, L Tai, ... Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International …, 2003 | 294 | 2003 |
| Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides N Youngblood, Y Anugrah, R Ma, SJ Koester, M Li Nano letters 14 (5), 2741-2746, 2014 | 274 | 2014 |
| High speed composite p-channel Si/SiGe heterostructure for field effect devices JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott US Patent 6,350,993, 2002 | 272 | 2002 |
| Optical absorption in graphene integrated on silicon waveguides H Li, Y Anugrah, SJ Koester, M Li Applied Physics Letters 101 (11), 111110-111110-5, 2012 | 259 | 2012 |
| 3D integrated circuit device fabrication with precisely controllable substrate removal MG Farooq, R Hannon, SS Iyer, SJ Koester, S Purushothaman, RY Roy US Patent 8,129,256, 2012 | 252 | 2012 |
| Wafer-level 3D integration technology SJ Koester, AM Young, RR Yu, S Purushothaman, KN Chen, ... IBM Journal of Research and Development 52 (6), 583-597, 2008 | 242 | 2008 |
| Practical strategies for power-efficient computing technologies L Chang, DJ Frank, RK Montoye, SJ Koester, BL Ji, PW Coteus, ... Proceedings of the IEEE 98 (2), 215-236, 2010 | 241 | 2010 |
| On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors SO Koswatta, SJ Koester, W Haensch IEEE Transactions on Electron Devices 57 (12), 3222-3230, 2010 | 209 | 2010 |
| High-speed waveguide-coupled graphene-on-graphene optical modulators SJ Koester, M Li Applied Physics Letters 100 (17), 171107-171107-4, 2012 | 208 | 2012 |
| High-speed germanium-on-SOI lateral PIN photodiodes G Dehlinger, SJ Koester, JD Schaub, JO Chu, QC Ouyang, A Grill Photonics Technology Letters, IEEE 16 (11), 2547-2549, 2004 | 201 | 2004 |
| Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor J Kim, A Paul, PA Crowell, SJ Koester, SS Sapatnekar, JP Wang, CH Kim Proceedings of the IEEE 103 (1), 106-130, 2014 | 186 | 2014 |
| Hafnium oxide gate dielectrics on sulfur-passivated germanium MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ... Applied physics letters 89 (11), 2006 | 179 | 2006 |
John A. OttResearch Engineer, IBMVerified email at us.ibm.com
