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Yen-Kai Lin
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Compact models of negative-capacitance FinFETs: Lumped and distributed charge models
JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2016
1012016
Engineering Negative Differential Resistance in NCFETs for Analog Applications
H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, MY Kao, ...
IEEE Transactions on Electron Devices 65 (5), 2033-2039, 2018
952018
Proposal for capacitance matching in negative capacitance field-effect transistors
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ...
IEEE Electron Device Letters 40 (3), 463-466, 2019
782019
Optimization of negative-capacitance vertical-tunnel FET (NCVT-FET)
VPH Hu, HH Lin, YK Lin, C Hu
IEEE Transactions on Electron Devices 67 (6), 2593-2599, 2020
602020
Analysis and modeling of inner fringing field effect on negative capacitance FinFETs
YK Lin, H Agarwal, P Kushwaha, MY Kao, YH Liao, K Chatterjee, ...
IEEE Transactions on Electron Devices 66 (4), 2023-2027, 2019
442019
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ...
IEEE Electron Device Letters 41 (1), 179-182, 2019
422019
NCFET design considering maximum interface electric field
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, JP Duarte, ...
IEEE Electron Device Letters 39 (8), 1254-1257, 2018
412018
Response speed of negative capacitance FinFETs
D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 49-50, 2018
412018
Spacer engineering in negative capacitance FinFETs
YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ...
IEEE Electron Device Letters 40 (6), 1009-1012, 2019
392019
Variation caused by spatial distribution of dielectric and ferroelectric grains in a negative capacitance field-effect transistor
MY Kao, AB Sachid, YK Lin, YH Liao, H Agarwal, P Kushwaha, JP Duarte, ...
IEEE Transactions on Electron Devices 65 (10), 4652-4658, 2018
372018
Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode
YK Lin, JG Hwu
IEEE Transactions on Electron Devices 61 (9), 3217-3222, 2014
352014
Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved Sensitivity in Presence of Parasitic Capacitance
H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, HL Chang, ...
IEEE Transactions on Electron Devices 65 (3), 1211-1216, 2018
332018
Characterization and modeling of flicker noise in FinFETs at advanced technology node
P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ...
IEEE Electron Device Letters 40 (6), 985-988, 2019
312019
Anomalously beneficial gate-length scaling trend of negative capacitance transistors
YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 40 (11), 1860-1863, 2019
282019
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
H Agarwal, C Gupta, R Goel, P Kushwaha, YK Lin, MY Kao, JP Duarte, ...
IEEE Transactions on Electron Devices 66 (10), 2019
232019
Optimization of NCFET by matching dielectric and ferroelectric nonuniformly along the channel
MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ...
IEEE Electron Device Letters 40 (5), 822-825, 2019
222019
A Predictive Tunnel FET Compact Model With Atomistic Simulation Validation
YK Lin, S Khandelwal, JP Duarte, HL Chang, S Salahuddin, C Hu
IEEE Transactions on Electron Devices 64 (2), 599-605, 2017
222017
Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors
YK Lin, JG Hwu
IEEE Transactions on Electron Devices 61 (10), 3562-3565, 2014
192014
Effect of polycrystallinity and presence of dielectric phases on NC-FinFET variability
YK Lin, MY Kao, H Agarwal, YH Liao, P Kushwaha, K Chatterjee, ...
2018 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2018
182018
Modeling of advanced RF bulk FinFETs
P Kushwaha, H Agarwal, YK Lin, MY Kao, JP Duarte, HL Chang, W Wong, ...
IEEE Electron Device Letters 39 (6), 791-794, 2018
162018
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