Follow
Zhendong Hong
Zhendong Hong
Meta Platforms, Inc.
Verified email at meta.com
Title
Cited by
Cited by
Year
Osteoblast proliferation on hydroxyapatite thin coatings produced by right angle magnetron sputtering
A Mello, Z Hong, AM Rossi, L Luan, M Farina, W Querido, J Eon, J Terra, ...
Biomedical Materials 2 (2), 67, 2007
652007
Crystalline hydroxyapatite thin films produced at room temperature—An opposing radio frequency magnetron sputtering approach
Z Hong, L Luan, SB Paik, B Deng, DE Ellis, JB Ketterson, A Mello, JG Eon, ...
Thin Solid Films 515 (17), 6773-6780, 2007
542007
Osteoblast proliferation on hydroxyapatite coated substrates prepared by right angle magnetron sputtering
Z Hong, A Mello, T Yoshida, L Luan, PH Stern, A Rossi, DE Ellis, ...
Journal of Biomedical Materials Research Part A: An Official Journal of The …, 2010
422010
Methods of forming gate structures for transistor devices for CMOS applications
Z Hong, S Tzeng, A Joshi, A Bodke, D Pisharoty, U Raghuram, O Karlsson, ...
US Patent 9,105,497, 2015
362015
Highly directional fluorescence emission from dye molecules embedded in a dielectric layer adjacent to a silver film
L Luan, PR Sievert, W Mu, Z Hong, JB Ketterson
New Journal of Physics 10 (7), 073012, 2008
242008
Atomic layer deposition of metal oxides for memory applications
Z Hong, H Pham, R Higuchi, V Gopal, I Hashim, T Minvielle, T Yamaguchi
US Patent 8,846,443, 2014
182014
Angular radiation pattern of electric dipoles embedded in a thin film in the vicinity of a dielectric half space
L Luan, PR Sievert, B Watkins, W Mu, Z Hong, JB Ketterson
Applied physics letters 89 (3), 2006
182006
High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction
A Joshi, J Foster, Z Hong, O Karlsson, B Li, U Raghuram
US Patent 8,735,302, 2014
122014
Tantalum carbide metal gate stack for mid-gap work function applications
Z Hong, P Besser, K Choi, A Joshi, O Karlsson, S Tzeng
US Patent App. 14/315,079, 2016
112016
Method for forming a low resistivity tungsten silicide layer for metal gate stack applications
Z Hong, A Bodke, S Tzeng
US Patent App. 13/915,324, 2014
92014
Methods of forming gate structures for transistor devices for cmos applications and the resulting products
Z Hong, S Tzeng, A Joshi, A Bodke, D Pisharoty, U Raghuram, O Karlsson, ...
US Patent App. 14/793,005, 2015
82015
Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices
A Lee, N Fuchigami, D Pisharoty, Z Hong, E Haywood, A Joshi, ...
Journal of Vacuum Science & Technology A 32 (1), 2014
82014
72‐4: Invited Paper: Synthetic Defect Generation for Display Front‐of‐Screen Quality Inspection: A Survey
S Mou, M Cao, Z Hong, P Huang, J Shan, J Shi
SID Symposium Digest of Technical Papers 53 (1), 975-978, 2022
62022
Gate structures for transistor devices for CMOS applications and products
Z Hong, S Tzeng, A Joshi, A Bodke, D Pisharoty, U Raghuram, O Karlsson, ...
US Patent 9,362,283, 2016
62016
Atomic layer deposition of metal oxides for memory applications
Z Hong, V Gopal, I Hashim, RJ Higuchi, T Minvielle, H Pham, ...
US Patent 9,246,096, 2016
62016
Combinatorial screening of metallic diffusion barriers
E Adhiprakasha, S Barstow, A Bodke, Z Hong, U Raghuram, K Ramani, ...
US Patent 9,297,775, 2016
52016
Substrate processing including correction for deposition location
J Cheng, HYO Fong, D Wang, Z Hong, I De
US Patent 8,882,917, 2014
52014
Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same
A Joshi, S Barstow, P Besser, A Bodke, G Bouche, N Fuchigami, Z Hong, ...
US Patent App. 14/576,597, 2016
32016
Video Frame Interpolation via Structure-Motion based Iterative Fusion
X Li, M Cao, Y Tang, S Johnston, Z Hong, H Ma, J Shan
arXiv preprint arXiv:2105.05353, 2021
12021
Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
Z Hong, A Bodke, O Karlsson
US Patent App. 14/090,822, 2015
12015
The system can't perform the operation now. Try again later.
Articles 1–20