Graham E. Rowlands
Graham E. Rowlands
Research Scientist, BBN Technologies
Verified email at - Homepage
Cited by
Cited by
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
Nanosecond-timescale low energy switching of in-plane magnetic tunnel junctions through dynamic Oersted-field-assisted spin Hall effect
SV Aradhya, GE Rowlands, J Oh, DC Ralph, RA Buhrman
Nano letters 16 (10), 5987-5992, 2016
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 2011
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
Quantum reservoir computing with a single nonlinear oscillator
LCG Govia, GJ Ribeill, GE Rowlands, HK Krovi, TA Ohki
Physical Review Research 3 (1), 013077, 2021
Compact model for spin–orbit magnetic tunnel junctions
M Kazemi, GE Rowlands, E Ipek, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (2), 848-855, 2016
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 2011
Strategies and tolerances of spin transfer torque switching
DE Nikonov, GI Bourianoff, G Rowlands, IN Krivorotov
Journal of Applied Physics 107 (11), 2010
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
J Park, GE Rowlands, OJ Lee, DC Ralph, RA Buhrman
Applied Physics Letters 105 (10), 2014
Nonlinear ferromagnetic resonance induced by spin torque in nanoscale magnetic tunnel junctions
X Cheng, JA Katine, GE Rowlands, IN Krivorotov
Applied Physics Letters 103 (8), 2013
Magnetization dynamics in a dual free-layer spin-torque nano-oscillator
GE Rowlands, IN Krivorotov
Physical Review B 86 (9), 094425, 2012
Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
SV Aradhya, RA Buhrman, DC Ralph, GE Rowlands
US Patent 10,333,058, 2019
Cryogenic memory architecture integrating spin Hall effect based magnetic memory and superconductive cryotron devices
MH Nguyen, GJ Ribeill, MV Gustafsson, S Shi, SV Aradhya, AP Wagner, ...
Scientific reports 10 (1), 248, 2020
Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions
GE Rowlands, SV Aradhya, S Shi, EH Yandel, J Oh, DC Ralph, ...
Applied Physics Letters 110 (12), 2017
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ...
Journal of Applied Physics 111 (7), 2012
SuperMind: a survey of the potential of superconducting electronics for neuromorphic computing
M Schneider, E Toomey, G Rowlands, J Shainline, P Tschirhart, K Segall
Superconductor Science and Technology 35 (5), 053001, 2022
A cryogenic spin-torque memory element with precessional magnetization dynamics
GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki
Scientific reports 9 (1), 803, 2019
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