Lingquan Wang
Lingquan Wang
UC San Diego; Broadcom
Verified email at
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Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals
EJ Kim, L Wang, PM Asbeck, KC Saraswat, PC McIntyre
Applied Physics Letters 96 (1), 2010
A Distributed Model for Border Traps in MOS Devices
Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ...
IEEE Electron Device Letters 32 (4), 485-487, 2011
Scaling of nanowire transistors
B Yu, L Wang, Y Yuan, PM Asbeck, Y Taur
IEEE Transactions on Electron Devices 55 (11), 2846-2858, 2008
Design of tunneling field-effect transistors based on staggered heterojunctions for ultralow-power applications
L Wang, E Yu, Y Taur, P Asbeck
IEEE Electron Device Letters 31 (5), 431-433, 2010
Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation
MV Fischetti, L Wang, B Yu, C Sachs, PM Asbeck, Y Taur, M Rodwell
2007 IEEE International Electron Devices Meeting, 109-112, 2007
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
Electron Device Letters, IEEE 30 (11), 1128-1130, 2009
A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures
L Wang, D Wang, PM Asbeck
Solid-state electronics 50 (11-12), 1732-1739, 2006
Pragmatic design of nanoscale multi-gate CMOS
JG Fossum, LQ Wang, JW Yang, SH Kim, VP Trivedi
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Nanowire photodetector and image sensor with internal gain
D Wang, C Soci, Y Lo, A Zhang, D Aplin, L Wang, S Dayeh, XY Bao
US Patent 8,440,997, 2013
III–V FET channel designs for high current densities and thin inversion layers
M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ...
68th Device Research Conference, 149-152, 2010
Electrical Properties of Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs
M Passlack, R Droopad, P Fejes, L Wang
IEEE electron device letters 30 (1), 2-4, 2008
InGaN/GaN Schottky diodes with enhanced voltage handling capability for varactor applications
W Lu, L Wang, S Gu, DPR Aplin, DM Estrada, KL Paul, PM Asbeck
IEEE electron device letters 31 (10), 1119-1121, 2010
Analysis of reverse leakage current and breakdown voltage in GaN and InGaN/GaN Schottky barriers
W Lu, L Wang, S Gu, DPR Aplin, DM Estrada, KL Paul, PM Asbeck
IEEE transactions on electron devices 58 (7), 1986-1994, 2011
Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity
L Wang, PM Asbeck, Y Taur
Solid-state electronics 54 (11), 1257-1262, 2010
Low voltage transistors
P Asbeck, L Wang
US Patent 8,148,718, 2012
III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
IEDM Tech. Dig.
MV Fischetti, L Wang, B Yu, C Sachs, PM Asbeck, Y Taur, M Rodwell
IEDM Tech. Dig, 109-112, 2007
Trapped charge induced gate oxide breakdown
A Neugroschel, L Wang, G Bersuker
Journal of applied physics 96 (6), 3388-3398, 2004
Semiconductor devices with dopant migration suppression and method of fabrication thereof
S Pradhan, D Zhao, L Wang, P Ranade, L Scudder
US Patent 9,112,057, 2015
Analysis of photoelectronic response in semiconductor nanowires
L Wang, P Asbeck
2006 Sixth IEEE Conference on Nanotechnology 2, 716-719, 2006
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