| Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017 | 244 | 2017 |
| Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode JG Lee, BR Park, CH Cho, KS Seo, HY Cha IEEE Electron Device Letters 34 (2), 214-216, 2013 | 115 | 2013 |
| High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha IEEE Electron Device Letters 34 (3), 354-356, 2013 | 63 | 2013 |
| State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha Applied Physics Express 5 (6), 066502, 2012 | 62 | 2012 |
| Stable Subloop Behavior in Ferroelectric Si-Doped HfO2 K Lee, HJ Lee, TY Lee, HH Lim, MS Song, HK Yoo, DI Suh, JG Lee, Z Zhu, ... ACS applied materials & interfaces 11 (42), 38929-38936, 2019 | 51 | 2019 |
| High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors JG Lee, HS Kim, KS Seo, CH Cho, HY Cha Solid-State Electronics 122, 32-36, 2016 | 45 | 2016 |
| Review of ferroelectric field‐effect transistors for three‐dimensional storage applications HW Park, JG Lee, CS Hwang Nano Select 2 (6), 1187-1207, 2021 | 32 | 2021 |
| Review of ferroelectric field-effect-transistors for three dimensional storage applications HW Park, JG Lee, CS Hwang Nanoselect, 2021 | 32 | 2021 |
| Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ... Applied Physics Letters 115 (18), 2019 | 29 | 2019 |
| Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor SW Han, JG Lee, CH Cho, HY Cha Applied Physics Express 7 (11), 111002, 2014 | 29 | 2014 |
| Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain JG Lee, SW Han, BR Park, HY Cha Applied Physics Express 7 (1), 014101, 2013 | 29 | 2013 |
| Schottky barrier diode embedded AlGaN/GaN switching transistor BR Park, JY Lee, JG Lee, DM Lee, MK Kim, HY Cha Semiconductor science and technology 28 (12), 125003, 2013 | 20 | 2013 |
| Normally-off AlGaN/GaN-on-Si power switching device with embedded Schottky barrier diode BR Park, JG Lee, HY Cha Applied Physics Express 6 (3), 031001, 2013 | 20 | 2013 |
| Nonvolatile memory device and method of fabricating the same HY Cha, JG Lee, KS Seo KR Patent 1,013,953,740,000, 2014 | 19 | 2014 |
| Field plated AlGaN/GaN-on-Si HEMTs for high voltage switching applications JG Lee, HJ Lee, HY Cha, M Lee, Y Ryoo, KS Seo, JK Mun Journal of the Korean Physical Society 59 (3), 2297-2300, 2011 | 19 | 2011 |
| Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere JG Lee, HS Kim, JY Lee, KS Seo, HY Cha Semiconductor Science and Technology 30 (11), 115008, 2015 | 16 | 2015 |
| Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha Semiconductor Science and Technology 30 (8), 085005, 2015 | 15 | 2015 |
| Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ... IEEE Electron Device Letters 39 (8), 1195-1198, 2018 | 13 | 2018 |
| Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process BR Park, JG Lee, HJ Lee, J Lim, KS Seo, HY Cha Electronics Letters 48 (3), 181-182, 2012 | 13 | 2012 |
| High‐performance e‐mode algan/gan mis‐hemt with dual gate insulator employing sion and hfon IH Hwang, SK Eom, GH Choi, MJ Kang, JG Lee, HY Cha, KS Seo Physica status solidi (a) 215 (10), 1700650, 2018 | 12 | 2018 |
Si Joon KimAssociate Professor, Kangwon National UniversityVerified email at kangwon.ac.kr
