| High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts H Fang, S Chuang, TC Chang, K Takei, T Takahashi, A Javey Nano letters 12 (7), 3788-3792, 2012 | 2019 | 2012 |
| MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014 | 637 | 2014 |
| Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ... Nature 468 (7321), 286-289, 2010 | 474 | 2010 |
| High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors M Tosun, S Chuang, H Fang, AB Sachid, M Hettick, Y Lin, Y Zeng, ... ACS nano 8 (5), 4948-4953, 2014 | 347 | 2014 |
| Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ... ACS nano 8 (6), 6265-6272, 2014 | 220 | 2014 |
| Ballistic InAs nanowire transistors S Chuang, Q Gao, R Kapadia, AC Ford, J Guo, A Javey Nano letters 13 (2), 555-558, 2013 | 217 | 2013 |
| Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films TJ Ha, K Chen, S Chuang, KM Yu, D Kiriya, A Javey Nano letters 15 (1), 392-397, 2015 | 124 | 2015 |
| Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ... Nano letters 12 (4), 2060-2066, 2012 | 116 | 2012 |
| Ultrathin body InAs tunneling field-effect transistors on Si substrates AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey Applied Physics Letters 98 (11), 2011 | 111 | 2011 |
| Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes S Chuang, R Kapadia, H Fang, T Chia Chang, WC Yen, YL Chueh, ... Applied Physics Letters 102 (24), 2013 | 95 | 2013 |
| Direct growth of single-crystalline III–V semiconductors on amorphous substrates K Chen, R Kapadia, A Harker, S Desai, J Seuk Kang, S Chuang, M Tosun, ... Nature communications 7 (1), 10502, 2016 | 66 | 2016 |
| Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn AC Ford, S Chuang, JC Ho, YL Chueh, Z Fan, A Javey Nano letters 10 (2), 509-513, 2010 | 64 | 2010 |
| Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness K Takei, S Chuang, H Fang, R Kapadia, CH Liu, J Nah, H Sul Kim, E Plis, ... Applied Physics Letters 99 (10), 2011 | 56 | 2011 |
| Nano Lett. H Fang, S Chuang, TC Chang, K Takei, T Takahashi, A Javey Nano Lett 12 (7), 3788-3792, 2012 | 43 | 2012 |
| Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors H Fang, S Chuang, K Takei, HS Kim, E Plis, CH Liu, S Krishna, YL Chueh, ... IEEE electron device letters 33 (4), 504-506, 2012 | 40 | 2012 |
| Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs R Kapadia, K Takei, AC Ford, H Fang, S Chuang, M Madsen, S Krishna, ... 69th Device Research Conference, 13-16, 2011 | 1 | 2011 |
| Low Dimensional Materials for Next Generation Electronics S Chuang University of California, Berkeley, 2014 | | 2014 |
| Zn Gas-Phase Doping of InAs Nanostructures S Chuang | | 2012 |
| Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments (Supporting Information) S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ... | | |
