Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon MO Baykan, SE Thompson, T Nishida Journal of Applied Physics 108 (9), 2010 | 78 | 2010 |
Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 65 | 2019 |
Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ... 2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010 | 57 | 2010 |
Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET CD Young, MO Baykan, A Agrawal, H Madan, K Akarvardar, C Hobbs, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 18-19, 2011 | 36 | 2011 |
(1 1 0) and (1 0 0) Sidewall-oriented FinFETs: A performance and reliability investigation CD Young, K Akarvardar, MO Baykan, K Matthews, I Ok, T Ngai, KW Ang, ... Solid-state electronics 78, 2-10, 2012 | 30 | 2012 |
Strain tunable silicon and germanium nanowire optoelectronic devices MO Baykan, T Nishida, SE Thompson US Patent App. 13/500,681, 2012 | 28 | 2012 |
Impact of fin doping and gate stack on FinFET (110) and (100) electron and hole mobilities K Akarvardar, CD Young, MO Baykan, I Ok, T Ngai, KW Ang, MP Rodgers, ... IEEE electron device letters 33 (3), 351-353, 2012 | 23 | 2012 |
Performance and variability in multi-VTFinFETs using fin doping K Akarvardar, CD Young, D Veksler, KW Ang, I Ok, M Rodgers, V Kaushik, ... Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012 | 13 | 2012 |
Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors MO Baykan, CD Young, K Akarvardar, P Majhi, C Hobbs, P Kirsch, ... Applied Physics Letters 100 (12), 2012 | 5 | 2012 |
Strain effects in AlGaN/GaN HEMTs M Chu, AD Koehler, A Gupta, S Parthasarathy, MO Baykan, SE Thompson, ... Materials and Reliability Handbook for Semiconductor Optical and Electron …, 2013 | 4 | 2013 |
Electrical characterization and reliability assessment of double-gate FinFETs CD Young, K Akarvardar, K Matthews, MO Baykan, J Pater, I Ok, T Ngai, ... ECS Transactions 50 (4), 201, 2013 | 3 | 2013 |
Understanding the FinFET mobility by systematic experiments K Akarvardar, CD Young, MO Baykan, CC Hobbs Toward Quantum FinFET, 55-79, 2013 | 2 | 2013 |
Hole mobility enhancement in uniaxially strained SiGe FinFETs: analysis and prospects R Bijesh, I Ok, M Baykan, C Hobbs, P Majhi, R Jammy, S Datta 69th Device Research Conference, 237-238, 2011 | 2 | 2011 |
Size-and orientation-dependent strain effects on ballistic Si p-type nanowire field-effect transistors MO Baykan, SE Thompson, T Nishida IEEE transactions on nanotechnology 11 (6), 1231-1238, 2012 | 1 | 2012 |
Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices MO Baykan University of Florida, 2012 | 1 | 2012 |
Self-aligned gate edge architecture with alternate channel material B Guha, A Bowonder, W Hsu, MO Baykan, T Ghani US Patent 11,456,357, 2022 | | 2022 |