Follow
Chenyue Ma
Chenyue Ma
Hiroshima University
Verified email at pku.edu.cn
Title
Cited by
Cited by
Year
Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes
M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ...
IEEE electron device letters 32 (7), 955-957, 2011
1022011
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan
IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008
962008
Universal NBTI compact model for circuit aging simulation under any stress conditions
C Ma, HJ Mattausch, K Matsuzawa, S Yamaguchi, T Hoshida, M Imade, ...
IEEE Transactions on Device and Materials Reliability 14 (3), 818-825, 2014
562014
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
L Zhang, C Ma, J He, X Lin, M Chan
Solid-state electronics 54 (8), 806-808, 2010
502010
Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation
C Ma, HJ Mattausch, M Miyake, T Iizuka, M Miura-Mattausch, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 2A. 3.1-2A. 3.6, 2013
362013
ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, K Chen
Journal of applied physics 110 (11), 2011
222011
FinFET: From compact modeling to circuit performance
F He, X Zhou, C Ma, J Zhang, Z Liu, W Wu, X Zhang, L Zhang
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
172010
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
C Ma, L Zhang, C Zhang, X Zhang, J He, X Zhang
Microelectronics Reliability 51 (2), 337-341, 2011
152011
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability
C Ma, B Li, L Zhang, J He, X Zhang, X Lin, M Chan
2009 10th International Symposium on Quality Electronic Design, 7-12, 2009
152009
Reliability of enhancement-mode AlGaN/GaN HEMTs under ON-state gate overdrive
C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, KJ Chen
2010 International Electron Devices Meeting, 20.4. 1-20.4. 4, 2010
142010
Gate underlap design for short channel effects control in cylindrical gate-all-around MOSFETs based on an analytical model
L Zhang, S Wang, C Ma, J He, C Xu, Y Ma, Y Ye, H Liang, Q Chen, ...
IETE Technical Review 29 (1), 29-35, 2012
132012
Compact modeling of dynamic MOSFET degradation due to hot-electrons
H Tanoue, A Tanaka, Y Oodate, T Nakahagi, D Sugiyama, C Ma, ...
IEEE Transactions on Device and Materials Reliability 17 (1), 52-58, 2017
92017
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
H Jin, Z Jian, Z Lining, M Chenyue, C Mansun
Journal of Semiconductors 30 (2), 024001, 2009
92009
Modeling of NBTI stress induced hole-trapping and interface-state-generation mechanisms under a wide range of bias conditions
C Ma, HJ Mattausch, M Miyake, T IIzuka, K Matsuzawa, S Yamaguchi, ...
IEICE transactions on electronics 96 (10), 1339-1347, 2013
82013
Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core–Shell Structure
Y Fu, L Zhang, J He, C Ma, L Chen, Y Xu
Journal of Computational and Theoretical Nanoscience 7 (3), 528-535, 2010
82010
FinFET reliability study by forward gated-diode generation–recombination current
C Ma, B Li, Y Wei, L Zhang, J He, X Zhang, X Lin, M Chan
Semiconductor science and technology 23 (7), 075008, 2008
82008
Investigation of the NBTI induced mobility degradation for precise circuit aging simulation
C Ma, X Li, F Sun, L Zhang, X Lin
2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016
72016
Investigation of nitrogen enhanced NBTI effect using the universal prediction model
P Wu, C Ma, L Zhang, X Lin, M Chan
2015 IEEE International Reliability Physics Symposium, XT. 5.1-XT. 5.4, 2015
72015
Universal properties and compact modeling of dynamic hot-electron degradation in n-MOSFETs
H Tanoue, A Tanaka, Y Oodate, T Nakahagi, C Ma, M Miyake, ...
2013 IEEE International Reliability Physics Symposium (IRPS), CM. 4.1-CM. 4.6, 2013
72013
A numerical method to simulate THz-wave generation and detection of field-effect transistors
X Mou, Y Chen, C Ma, Y Che, J He
2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008
72008
The system can't perform the operation now. Try again later.
Articles 1–20