| Impacts of random telegraph noise (RTN) on digital circuits M Luo, R Wang, S Guo, J Wang, J Zou, R Huang IEEE Transactions on Electron Devices 62 (6), 1725-1732, 2014 | 88 | 2014 |
| Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs J Zou, Q Xu, J Luo, R Wang, R Huang, Y Wang IEEE transactions on electron devices 58 (10), 3379-3387, 2011 | 73 | 2011 |
| Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization R Wang, J Zhuge, R Huang, T Yu, J Zou, DW Kim, D Park, Y Wang IEEE transactions on electron devices 58 (8), 2317-2325, 2011 | 64 | 2011 |
| New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ... 2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012 | 43 | 2012 |
| A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ... 2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013 | 34 | 2013 |
| New observations on complex RTN in scaled high-κ/metal-gate MOSFETs—The role of defect coupling under DC/AC condition P Ren, P Hao, C Liu, R Wang, X Jiang, Y Qiu, R Huang, S Guo, M Luo, ... 2013 IEEE International Electron Devices Meeting, 31.4. 1-31.4. 4, 2013 | 33 | 2013 |
| Complex random telegraph noise (RTN): What do we understand? R Wang, S Guo, Z Zhang, J Zou, D Mao, R Huang 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 31 | 2018 |
| Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling R Huang, R Wang, J Zhuge, C Liu, T Yu, L Zhang, X Huang, Y Ai, J Zou, ... 2011 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2011 | 31 | 2011 |
| Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits J Zou, R Wang, M Luo, R Huang, N Xu, P Ren, C Liu, W Xiong, J Wang, ... 2013 Symposium on VLSI Technology, T186-T187, 2013 | 29 | 2013 |
| Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology J Zhuge, R Wang, R Huang, J Zou, X Huang, DW Kim, D Park, X Zhang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 29 | 2009 |
| Towards the systematic study of aging induced dynamic variability in nano-MOSFETs: Adding the missing cycle-to-cycle variation effects into device-to-device variation C Liu, J Zou, R Wang, R Huang, X Xu, J Liu, H Wu, Y Wang 2011 International Electron Devices Meeting, 25.4. 1-25.4. 4, 2011 | 25 | 2011 |
| New observations on AC NBTI induced dynamic variability in scaled high-κ/metal-gate MOSFETs: characterization, origin of frequency dependence, and impacts on circuits C Liu, P Ren, R Wang, R Huang, J Ou, Q Huang, J Zou, J Wang, J Wu, ... 2012 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2012 | 18 | 2012 |
| Experimental demonstration of current mirrors based on silicon nanowire transistors for inversion and subthreshold operations R Huang, J Zou, R Wang, C Fan, Y Ai, J Zhuge, Y Wang IEEE transactions on electron devices 58 (10), 3639-3642, 2011 | 18 | 2011 |
| Method for testing density and location of gate dielectric layer trap of semiconductor device R Huang, J Zou, C Liu, R Wang, J Fan, Y Wang US Patent 9,018,968, 2015 | 16 | 2015 |
| New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits J Zou, R Wang, S Guo, M Luo, Z Yu, X Jiang, P Ren, J Wang, J Liu, J Wu, ... 2014 IEEE International Electron Devices Meeting, 34.5. 1-34.5. 4, 2014 | 16 | 2014 |
| Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices Z Zhang, S Guo, X Jiang, R Wang, R Huang, J Zou 2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016 | 14 | 2016 |
| Characterization of random telegraph noise in scaled high-κ/metal-gate MOSFETs with SiO2/HfO2 gate dielectrics M Li, R Wang, J Zou, R Huang ECS Transactions 52 (1), 941, 2013 | 13 | 2013 |
| New understanding of the statistics of random telegraph noise in Si nanowire transistors-the role of quantum confinement and non-stationary effects C Liu, R Wang, J Zou, R Huang, C Fan, L Zhang, J Fan, Y Ai, Y Wang 2011 International Electron Devices Meeting, 23.6. 1-23.6. 4, 2011 | 13 | 2011 |
| Frequency-modulated charge pumping with extremely high gate leakage JT Ryan, J Zou, R Southwick, JP Campbell, KP Cheung, AS Oates, ... IEEE Transactions on Electron Devices 62 (3), 769-775, 2015 | 11 | 2015 |
| HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors R Huang, R Wang, C Liu, L Zhang, J Zhuge, Y Tao, J Zou, Y Liu, Y Wang Microelectronics Reliability 51 (9-11), 1515-1520, 2011 | 9 | 2011 |
