| Theory of the peroxy-radical defect in a-Si O 2 AH Edwards, WB Fowler Physical Review B 26 (12), 6649, 1982 | 283 | 1982 |
| Electronic structure of intrinsic defects in crystalline germanium telluride AH Edwards, AC Pineda, PA Schultz, MG Martin, AP Thompson, ... Physical Review B 73 (4), 045210, 2006 | 245 | 2006 |
| Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors RE Stahlbush, AH Edwards, DL Griscom, BJ Mrstik Journal of applied physics 73 (2), 658-667, 1993 | 201 | 1993 |
| Mechanisms for radiation dose-rate sensitivity of bipolar transistors HP Hjalmarson, RL Pease, SC Witczak, MR Shaneyfelt, JR Schwank, ... IEEE Transactions on Nuclear Science 50 (6), 1901-1909, 2003 | 167 | 2003 |
| Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartz VB Sulimov, PV Sushko, AH Edwards, AL Shluger, AM Stoneham Physical Review B 66 (2), 024108, 2002 | 166 | 2002 |
| Theory of the P b center at the< 111> Si/SiO 2 interface AH Edwards Physical Review B 36 (18), 9638, 1987 | 136 | 1987 |
| Interaction of H and H 2 with the silicon dangling orbital at the< 111> Si/SiO 2 interface AH Edwards Physical Review B 44 (4), 1832, 1991 | 117 | 1991 |
| Reconfigurable memristive device technologies AH Edwards, HJ Barnaby, KA Campbell, MN Kozicki, W Liu, MJ Marinella Proceedings of the IEEE 103 (7), 1004-1033, 2015 | 103 | 2015 |
| Semiempirical molecular orbital techniques applied to silicon dioxide: MINDO/3 AH Edwards, WB Fowler Journal of Physics and Chemistry of Solids 46 (7), 841-857, 1985 | 74 | 1985 |
| Layer intermixing during metal/metal oxide adsorption: Ti/sapphire (0001) C Verdozzi, PA Schultz, R Wu, AH Edwards, N Kioussis Physical Review B 66 (12), 125408, 2002 | 72 | 2002 |
| Theory of persistent, p-type, metallic conduction in c-GeTe AH Edwards, AC Pineda, PA Schultz, MG Martin, AP Thompson, ... Journal of Physics: Condensed Matter 17 (32), L329, 2005 | 68 | 2005 |
| An introduction to reconfigurable systems JC Lyke, CG Christodoulou, GA Vera, AH Edwards Proceedings of the IEEE 103 (3), 291-317, 2015 | 64 | 2015 |
| Calibration of embedded-cluster method for defect studies in amorphous silica AS Mysovsky, PV Sushko, S Mukhopadhyay, AH Edwards, AL Shluger Physical Review B 69 (8), 085202, 2004 | 64 | 2004 |
| Dissociation of H2 at silicon dangling orbitals in a-SiO2: a quantum mechanical treatment of nuclear motion AH Edwards Journal of non-crystalline solids 187, 232-243, 1995 | 55 | 1995 |
| Interaction of hydrogen with defects in a-SiO2 AH Edwards, JA Pickard, RE Stahlbush Journal of non-crystalline solids 179, 148-161, 1994 | 52 | 1994 |
| Theory of the self-trapped hole in a-SiO 2 AH Edwards Physical review letters 71 (19), 3190, 1993 | 46 | 1993 |
| Interaction of hydrogenated molecules with intrinsic defects in a-SiO2 AH Edwards, G Germann Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1988 | 46 | 1988 |
| Thermally activated electron capture by mobile protons in SiO2 thin films K Vanheusden, SP Karna, RD Pugh, WL Warren, DM Fleetwood, ... Applied Physics Letters 72 ((1)), 28--30, 1998 | 38 | 1998 |
| Asymmetrical relaxation of simple E’centers in silicon dioxide isomorphs AH Edwards, WB Fowler, FJ Feigl Physical Review B 37 (15), 9000, 1988 | 38 | 1988 |
| Transient thermal gradients in barium titanate positive temperature coefficient (PTC) thermistors DS Smith, N Ghayoub, I Charissou, O Bellon, P Abélard, AH Edwards Journal of the American ceramic Society 81 (7), 1789-1796, 1998 | 35 | 1998 |
