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Katsuhiro Tomioka
Katsuhiro Tomioka
Hokkaido University / Associate Professor
Verified email at rciqe.hokudai.ac.jp - Homepage
Title
Cited by
Cited by
Year
A III–V nanowire channel on silicon for high-performance vertical transistors
K Tomioka, M Yoshimura, T Fukui
Nature 488 (7410), 189-192, 2012
8302012
Control of InAs nanowire growth directions on Si
K Tomioka, J Motohisa, S Hara, T Fukui
Nano letters 8 (10), 3475-3480, 2008
4582008
GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si
K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui
Nano letters 10 (5), 1639-1644, 2010
4212010
Growth of core–shell InP nanowires for photovoltaic application by selective-area metal organic vapor phase epitaxy
H Goto, K Nosaki, K Tomioka, S Hara, K Hiruma, J Motohisa, T Fukui
Applied Physics Express 2 (3), 035004, 2009
3032009
Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si (111) substrate
K Tomioka, Y Kobayashi, J Motohisa, S Hara, T Fukui
Nanotechnology 20 (14), 145302, 2009
2122009
III–V nanowires on Si substrate: selective-area growth and device applications
K Tomioka, T Tanaka, S Hara, K Hiruma, T Fukui
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 1112-1129, 2010
1982010
Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction
K Tomioka, M Yoshimura, T Fukui
2012 symposium on VLSI technology (VLSIT), 47-48, 2012
1942012
Growth of highly uniform InAs nanowire arrays by selective-area MOVPE
K Tomioka, P Mohan, J Noborisaka, S Hara, J Motohisa, T Fukui
Journal of Crystal Growth 298, 644-647, 2007
1762007
Selective-area growth of III-V nanowires and their applications
K Tomioka, K Ikejiri, T Tanaka, J Motohisa, S Hara, K Hiruma, T Fukui
Journal of Materials Research 26 (17), 2127-2141, 2011
1622011
Tunnel field-effect transistor using InAs nanowire/Si heterojunction
K Tomioka, T Fukui
Applied Physics Letters 98 (8), 2011
1502011
Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates
T Tanaka, K Tomioka, S Hara, J Motohisa, E Sano, T Fukui
Applied physics express 3 (2), 025003, 2010
1372010
Structural transition in indium phosphide nanowires
Y Kitauchi, Y Kobayashi, K Tomioka, S Hara, K Hiruma, T Fukui, ...
Nano letters 10 (5), 1699-1703, 2010
1332010
Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires
K Ikejiri, Y Kitauchi, K Tomioka, J Motohisa, T Fukui
Nano letters 11 (10), 4314-4318, 2011
1242011
Sub 60 mV/decade switch using an InAs nanowire–Si heterojunction and turn-on voltage shift with a pulsed doping technique
K Tomioka, M Yoshimura, T Fukui
Nano letters 13 (12), 5822-5826, 2013
882013
Crystallographic structure of InAs nanowires studied by transmission electron microscopy
K Tomioka, J Motohisa, S Hara, T Fukui
Japanese Journal of Applied Physics 46 (12L), L1102, 2007
742007
Position controlled nanowires for infrared single photon emission
SN Dorenbos, H Sasakura, MP Van Kouwen, N Akopian, S Adachi, ...
Applied Physics Letters 97 (17), 2010
672010
Indium phosphide core–shell nanowire array solar cells with lattice-mismatched window layer
M Yoshimura, E Nakai, K Tomioka, T Fukui
Applied Physics Express 6 (5), 052301, 2013
642013
Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
K Tomioka, T Fukui
Applied Physics Letters 104 (7), 2014
602014
GaAs/InGaP core–multishell nanowire-array-based solar cells
E Nakai, M Yoshimura, K Tomioka, T Fukui
Japanese Journal of Applied Physics 52 (5R), 055002, 2013
572013
Position-controlled III–V compound semiconductor nanowire solar cells by selective-area metal–organic vapor phase epitaxy
T Fukui, M Yoshimura, E Nakai, K Tomioka
Ambio 41, 119-124, 2012
572012
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