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sourabh khandelwal
sourabh khandelwal
Verified email at berkeley.edu
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Year
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ...
Nano letters 17 (8), 4801-4806, 2017
2282017
Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor
AI Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ...
IEEE Electron Device Letters 37 (1), 111-114, 2015
2222015
A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices
S Khandelwal, N Goyal, TA Fjeldly
IEEE Transactions on Electron Devices 58 (10), 3622-3625, 2011
1872011
FinFET modeling for IC simulation and design: using the BSIM-CMG standard
YS Chauhan, DD Lu, S Venugopalan, S Khandelwal, JP Duarte, ...
Academic Press, 2015
1862015
Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016
1762016
Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
S Khandelwal, YS Chauhan, TA Fjeldly
Transactions on Electron Devices 59 (10), 2856-2860, 2012
1502012
A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices
S Khandelwal, TA Fjeldly
Solid-State Electronics 76, 60-66, 2012
1112012
Robust surface-potential-based compact model for GaN HEMT IC design
S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ...
IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013
1102013
BSIM6: Analog and RF compact model for bulk MOSFET
YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ...
IEEE Transactions on Electron Devices 61 (2), 234-244, 2013
1092013
BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control
S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, MAU Karim, ...
IEEE Transactions on Electron Devices 59 (8), 2019-2026, 2012
992012
Compact models of negative-capacitance FinFETs: Lumped and distributed charge models
JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2016
882016
Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs
FM Yigletu, S Khandelwal, TA Fjeldly, B Iniguez
IEEE Transactions on Electron Devices 60 (11), 3746-3752, 2013
862013
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior
SA Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, YS Chauhan
IEEE Transactions on Electron Devices 63 (2), 565-572, 2015
802015
BSIM—Industry standard compact MOSFET models
YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ...
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
762012
ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model
S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ...
IEEE Transactions on Electron Devices 66 (1), 80-86, 2018
752018
Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics
S Khandelwal, JP Duarte, AI Khan, S Salahuddin, C Hu
IEEE Electron Device Letters 38 (1), 142-144, 2016
752016
Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs
S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan
IEEE Transactions on Electron Devices 62 (2), 443-448, 2014
642014
BSIM-CMG: Standard FinFET compact model for advanced circuit design
JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ...
ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015
582015
Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow
SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan
IEEE Journal of the Electron Devices Society 5 (5), 310-319, 2017
572017
Ferroelectric oscillators and their coupled networks
Z Wang, S Khandelwal, AI Khan
IEEE Electron Device Letters 38 (11), 1614-1617, 2017
522017
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